Journey Towards Nanowires - SUBRAMANIAM, SUBHA
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Microelectronics industry has moved towards Nanoscale regime which has achieved low power and high switching speed in electronic circuits. According to International Technology Roadmap for Semiconductors ITRS-2020, today's technology has reached a feature size of sub-10nm and moving towards 5.6nm. In order to sustain down scaling it is not only essential to develop new device architectures, but it may also be required to replace silicon. Intel has developed tri-gate transistor-based devices at 14nm gate length. Multi-Gate FETs and Nanowire transistor structures are found suitable below 14nm…mehr

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Produktbeschreibung
Microelectronics industry has moved towards Nanoscale regime which has achieved low power and high switching speed in electronic circuits. According to International Technology Roadmap for Semiconductors ITRS-2020, today's technology has reached a feature size of sub-10nm and moving towards 5.6nm. In order to sustain down scaling it is not only essential to develop new device architectures, but it may also be required to replace silicon. Intel has developed tri-gate transistor-based devices at 14nm gate length. Multi-Gate FETs and Nanowire transistor structures are found suitable below 14nm technology node. However, Vertical Nanowires developed with III-V compound materials, high- gate oxide materials, and metal gates better performance is explored.
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Autorenporträt
Subha Subramaniam ha realizado una contribución única en los amplios desarrollos técnicos del campo de la nanoelectrónica. En más de 20 años de docencia, ha sido profesora asociada y ha impartido varias asignaturas en el campo de la electrónica. Actualmente está afiliada al Shah and Anchor Kutchhi Engineering College, Mumbai, INDIA.