Andere Kunden interessierten sich auch für
![Nanowire Field Effect Transistors: Principles and Applications]( "Nanowire Field Effect Transistors: Principles and Applications")
Nanowire Field Effect Transistors: Principles and Applications74,99 €![Nanoelectronic Circuit Design]( "Nanoelectronic Circuit Design")
Nanoelectronic Circuit Design110,99 €![Transport of Information-Carriers in Semiconductors and Nanodevices]( "Transport of Information-Carriers in Semiconductors and Nanodevices")
Transport of Information-Carriers in Semiconductors and Nanodevices236,99 €![Viagem em direção a Nanowires]( "Viagem em direção a Nanowires")
Viagem em direção a Nanowires40,99 €![Semiconductor-On-Insulator Materials for Nanoelectronics Applications]( "Semiconductor-On-Insulator Materials for Nanoelectronics Applications")
Semiconductor-On-Insulator Materials for Nanoelectronics Applications110,99 €![Wavelength Conversion Using Silicon Nanowires]( "Wavelength Conversion Using Silicon Nanowires")
Wavelength Conversion Using Silicon Nanowires36,99 €![Silicon nanowires for hybrid solar cells]( "Silicon nanowires for hybrid solar cells")
Silicon nanowires for hybrid solar cells40,99 €
Microelectronics industry has moved towards Nanoscale regime which has achieved low power and high switching speed in electronic circuits. According to International Technology Roadmap for Semiconductors ITRS-2020, today's technology has reached a feature size of sub-10nm and moving towards 5.6nm. In order to sustain down scaling it is not only essential to develop new device architectures, but it may also be required to replace silicon. Intel has developed tri-gate transistor-based devices at 14nm gate length. Multi-Gate FETs and Nanowire transistor structures are found suitable below 14nm technology node. However, Vertical Nanowires developed with III-V compound materials, high- gate oxide materials, and metal gates better performance is explored.