Key enabling technologies for future wireless, wired, optical and satcom applications
Herausgeber: Debaillie, Bjorn; Steikuniene, Urte; Busson, Pierre; Ferrari, Philippe; Brunier, Francois; Belot, Didier; Gaquiere, Christophe
Key enabling technologies for future wireless, wired, optical and satcom applications
Herausgeber: Debaillie, Bjorn; Steikuniene, Urte; Busson, Pierre; Ferrari, Philippe; Brunier, Francois; Belot, Didier; Gaquiere, Christophe
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This book presents the latest research roadmaps and achievements from the European ecosystem (industry, research, and academia) driving the development of future wireless, wired, optical and satcom applications utilising the mm-wave and sub-THz bands.
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This book presents the latest research roadmaps and achievements from the European ecosystem (industry, research, and academia) driving the development of future wireless, wired, optical and satcom applications utilising the mm-wave and sub-THz bands.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Produktdetails
- Produktdetails
- Verlag: River Publishers
- Seitenzahl: 180
- Erscheinungstermin: 25. November 2024
- Englisch
- Abmessung: 234mm x 156mm
- ISBN-13: 9788770046657
- ISBN-10: 8770046654
- Artikelnr.: 71618894
- Verlag: River Publishers
- Seitenzahl: 180
- Erscheinungstermin: 25. November 2024
- Englisch
- Abmessung: 234mm x 156mm
- ISBN-13: 9788770046657
- ISBN-10: 8770046654
- Artikelnr.: 71618894
Björn Debaillie (Senior, IEEE) leads imec's collaborative R&D program on cutting-edge connected computing, covering high speed communications, high resolution sensing, and neuromorphic computing. As a seasoned researcher & manager, he is responsible for strategic collaborations and partnerships, innovation management, and public funding policies as well as the operational management and coordination across imec's collaborative programs and projects. Björn Debaillie coordinates public funded projects and seeds new initiatives. He holds patents, received awards and authored books and international papers published in various journals and conference proceedings. Philippe Ferrari (Senior, IEEE) received the Ph. D. degree from the "Institut National Polytechnique de Grenoble" (INPG), France, in 1992, with honors. Since 2004, he is a professor at the University Grenoble Alpes, Grenoble, France. His main research interest concerns tunable and miniaturized devices, such as filters, phase shifters, matching networks, couplers, power dividers and VCOs. These devices are developed in many technologies, PCB, CMOS/BiCMOS, and nanowires, at RF and mm-wave frequencies. He has worked towards the development of slow-wave CPW, and developed new topologies of slow-wave transmission lines, based on microstrip lines and SIWs, respectively. He is author or co-author of more than 300 papers published in international journals or conferences, and co-holder of six patents. He is a member of the Editorial Board of the International Journal on RF and Microwave Computer-Aided Engineering (Wiley), an Associate Editor of the International Journal of Microwave and Wireless Technologies (EuMA) and member of the Editorial Board of Electronics Letters. > 10GBs and more). He has also played an important role in the orientation of the RF & mmW roadmaps, and in the management of programs such as IPCEI within LETI. Beginning of 2023 he came back to ST in the Technology Design Platform group, in charge of Wireless strategy and Innovation. Moreover, he has participated and is participating in the elaboration of European and worldwide Roadmaps on Wireless, (NEREID, CORENECT, ECS-SRIA, IRDS ...). His current research interests include millimeter wave propagation through plastic, sub-THz communications, III-V devices on silicon for mmW and THz applications, and the use of RF for quantum computing. He was a member of the French National Scientific Council ""Micro and Nanotechnologies"" from 2012 to 2016, a member of various conference program committees such as RFIC, ESSCIRC, ISSCC, IEDM. He is a member of the IEEE-MTT-9 (mmW & THz Devices to System) technology committee and the EuMW technical committee. He is a reviewer for the IEEE MTT and SSC journals, and author or co-author of more than 400 publications and 70 patents. François Brunier (Member, IEEE) graduated as physics and electronics Engineer from Centrale-Supelec in 1997. From 1998 to 2002, he worked as device integration engineer for embedded DRAM products in STMicroelectronics Crolles. In 2002, he joined Soitec as head of advanced characterization laboratory. From 2009 to 2011, as a product manager, he led the RF-SOI and power SOI product development and offering. Since 2012, as a partnership program manager, he is in charge of European collaborative Chips JU programs, IPCEI and public relations. Christophe Gaquière is currently full professor at the University of Lille and carries out his research activity at the Institut d'Electronique de Microélectronique et de Nanotechnology (IEMN). The topics concern design, fabrication, characterization and modeling of HEMT's and HBT devices. He works on GaAs, InP, metamorphic HEMT's and now he is involved in the GaN activities. His main activities are microwave characterizations (small and large signal between 1 and 500 GHz) in order to correlate the microwave performances with the technological and topology parameters. Today, his activities concern mainly the investigation of two-dimensional electronic plasmons and gunn like effects for THz solid state GaN based detectors and emitters (HEMT and SSD), AlGaN/GaN nano-wires for microwave applications and MEMS activities based also on GaN. He was responsible for the microwave characterization part of the common laboratory between Thales TRT and IEMN focus on wide band gap semiconductor (GaN, SiC, and Diamond) rom 2003 up to 2007. He is in the TPC of several European conferences. He had in charge the Silicon millimeter wave advanced technologies part of the common lab between ST microelectronics and IEMN. He co-founded the company MC2-technolgies in 2004 (95 peoples) and he is actually general manager. Christophe Gaquière is the author or co-author of more than 150 publications and 300 communications. Pierre Busson (Senior, IEEE) received M.S. degree from the "Ecole Centrale d'Electronique" of Paris France in 1985 and Ph.D. degrees from the University of Rennes, France. In 1993, he worked for CELAR, national military research center, where he was involved in realization of propagation channel simulator for spread spectrum and frequency hopping. In 1995, he worked for CNET Rennes, national telecommunication research center, for the realization of the first integrated demonstrator for terrestrial digital TV with COFDM link. In 1997, he joined STMicroelectronics where he was involved in set-top boxes circuits for terrestrial, satellite and cable. He is currently Wireless RF System/Architect and a Fellow of ST Technical Staff, working on the development of the next generation for wireless system. Urt¿ Steik¿nien¿ earned her M.S.S. degree from the University of Warwick and began her career as a public sector auditor for PriceWaterhouseCoopers in London. In 2019, she co-founded a start-up focused on developing an FDA-registered medical device for diabetes patients. She holds four patents and is currently a Senior Project Manager at Teraglobus, where she oversees the execution of large collaborative projects co-funded by the Chips Joint Undertaking and Horizon Europe programmes.
Preface Editors' Biography List of Contributors List of Figures List of Tables 1 B55X: A SHIFT in STMicroelectronics BiCMOS Technologies 2 RF Technology Roadmap for 5G and 6G RF Front
end Systems 3 Advanced Substrate Technologies for Sub
THz Era 4 A CMOS Compatible III
V
on
300 mm Si Technology for Future High
speed Communication Systems: Challenges and Possibilities 5 The Impact of Irradiation on DC Characteristics and Low
Frequency Noise of Advanced SiGe:C HBTs 6 D
band Modulated Signal Generation using Photonics Techniques 7 Decarbonizing the Electronics Industry to Achieve Net Zero (2024) 8 Analog Multiplexing for Bandwidth and Sampling Rate Multiplication of Digital¿Analog Converters in Coherent Optical Transmission Systems 9 Challenges for 2.5D and 3D Integration of InP HBT Technology 10 Analysis of Quasi
Coaxial Via Implemented in IC Substrate using Multiple
Scattering Method 11 D
band Phased Array Antenna Module for 5G Backhaul 12 Sub
THz Transceiver Design for Future Generation Mobile Communications 13 Ka
Band GaN
on
SiC Power Amplifier for High EIRP Satellite Phased Antenna Array 14 InP on Si Technologies for Next
Generation Optical Communication High
speed Analog Front
Ends 15 150 nm Gallium Nitride on Silicon Carbide Technology for High
power 5G New Radio Applications 16 Post
process Substrate Porosification for RF Applications 17 A Multi
standard RF Bandpass Sigma
Delta ADC 18 D
band RF Architecture for Beyond 5G Wireless Networks: Specifications, Challenges, and Key Enabling Technologies 19 E
band and D
band VCOs: Distributed Tank Design Methodology, Bufferless Approach 20 2.5D, 3D Assembly Technologies for RF, mmW and Sub
THz Heterogeneous Systems 21 Heterointegration Approaches for InP
HBT Technologies for 5G Applications and Beyond 22 RF
Heterointegration at Wafer
level and Panel
level for mmWave Applications 23 SiGe BiCMOS & III
V Technologies Heterogeneous Integration Challenges 24 Advanced Packaging Solutions for mmWave Applications 25 Modular 3D mmW and THz Packaging Concepts and Technologies 26 LDS and AMP Processes for RF Antenna in Package (AiP) Applications in the E
and D
Bands 27 Sub
THz Antenna and Package Integration for Miniaturized Surface
Mount Device Modules Index
end Systems 3 Advanced Substrate Technologies for Sub
THz Era 4 A CMOS Compatible III
V
on
300 mm Si Technology for Future High
speed Communication Systems: Challenges and Possibilities 5 The Impact of Irradiation on DC Characteristics and Low
Frequency Noise of Advanced SiGe:C HBTs 6 D
band Modulated Signal Generation using Photonics Techniques 7 Decarbonizing the Electronics Industry to Achieve Net Zero (2024) 8 Analog Multiplexing for Bandwidth and Sampling Rate Multiplication of Digital¿Analog Converters in Coherent Optical Transmission Systems 9 Challenges for 2.5D and 3D Integration of InP HBT Technology 10 Analysis of Quasi
Coaxial Via Implemented in IC Substrate using Multiple
Scattering Method 11 D
band Phased Array Antenna Module for 5G Backhaul 12 Sub
THz Transceiver Design for Future Generation Mobile Communications 13 Ka
Band GaN
on
SiC Power Amplifier for High EIRP Satellite Phased Antenna Array 14 InP on Si Technologies for Next
Generation Optical Communication High
speed Analog Front
Ends 15 150 nm Gallium Nitride on Silicon Carbide Technology for High
power 5G New Radio Applications 16 Post
process Substrate Porosification for RF Applications 17 A Multi
standard RF Bandpass Sigma
Delta ADC 18 D
band RF Architecture for Beyond 5G Wireless Networks: Specifications, Challenges, and Key Enabling Technologies 19 E
band and D
band VCOs: Distributed Tank Design Methodology, Bufferless Approach 20 2.5D, 3D Assembly Technologies for RF, mmW and Sub
THz Heterogeneous Systems 21 Heterointegration Approaches for InP
HBT Technologies for 5G Applications and Beyond 22 RF
Heterointegration at Wafer
level and Panel
level for mmWave Applications 23 SiGe BiCMOS & III
V Technologies Heterogeneous Integration Challenges 24 Advanced Packaging Solutions for mmWave Applications 25 Modular 3D mmW and THz Packaging Concepts and Technologies 26 LDS and AMP Processes for RF Antenna in Package (AiP) Applications in the E
and D
Bands 27 Sub
THz Antenna and Package Integration for Miniaturized Surface
Mount Device Modules Index
Preface Editors' Biography List of Contributors List of Figures List of Tables 1 B55X: A SHIFT in STMicroelectronics BiCMOS Technologies 2 RF Technology Roadmap for 5G and 6G RF Front
end Systems 3 Advanced Substrate Technologies for Sub
THz Era 4 A CMOS Compatible III
V
on
300 mm Si Technology for Future High
speed Communication Systems: Challenges and Possibilities 5 The Impact of Irradiation on DC Characteristics and Low
Frequency Noise of Advanced SiGe:C HBTs 6 D
band Modulated Signal Generation using Photonics Techniques 7 Decarbonizing the Electronics Industry to Achieve Net Zero (2024) 8 Analog Multiplexing for Bandwidth and Sampling Rate Multiplication of Digital¿Analog Converters in Coherent Optical Transmission Systems 9 Challenges for 2.5D and 3D Integration of InP HBT Technology 10 Analysis of Quasi
Coaxial Via Implemented in IC Substrate using Multiple
Scattering Method 11 D
band Phased Array Antenna Module for 5G Backhaul 12 Sub
THz Transceiver Design for Future Generation Mobile Communications 13 Ka
Band GaN
on
SiC Power Amplifier for High EIRP Satellite Phased Antenna Array 14 InP on Si Technologies for Next
Generation Optical Communication High
speed Analog Front
Ends 15 150 nm Gallium Nitride on Silicon Carbide Technology for High
power 5G New Radio Applications 16 Post
process Substrate Porosification for RF Applications 17 A Multi
standard RF Bandpass Sigma
Delta ADC 18 D
band RF Architecture for Beyond 5G Wireless Networks: Specifications, Challenges, and Key Enabling Technologies 19 E
band and D
band VCOs: Distributed Tank Design Methodology, Bufferless Approach 20 2.5D, 3D Assembly Technologies for RF, mmW and Sub
THz Heterogeneous Systems 21 Heterointegration Approaches for InP
HBT Technologies for 5G Applications and Beyond 22 RF
Heterointegration at Wafer
level and Panel
level for mmWave Applications 23 SiGe BiCMOS & III
V Technologies Heterogeneous Integration Challenges 24 Advanced Packaging Solutions for mmWave Applications 25 Modular 3D mmW and THz Packaging Concepts and Technologies 26 LDS and AMP Processes for RF Antenna in Package (AiP) Applications in the E
and D
Bands 27 Sub
THz Antenna and Package Integration for Miniaturized Surface
Mount Device Modules Index
end Systems 3 Advanced Substrate Technologies for Sub
THz Era 4 A CMOS Compatible III
V
on
300 mm Si Technology for Future High
speed Communication Systems: Challenges and Possibilities 5 The Impact of Irradiation on DC Characteristics and Low
Frequency Noise of Advanced SiGe:C HBTs 6 D
band Modulated Signal Generation using Photonics Techniques 7 Decarbonizing the Electronics Industry to Achieve Net Zero (2024) 8 Analog Multiplexing for Bandwidth and Sampling Rate Multiplication of Digital¿Analog Converters in Coherent Optical Transmission Systems 9 Challenges for 2.5D and 3D Integration of InP HBT Technology 10 Analysis of Quasi
Coaxial Via Implemented in IC Substrate using Multiple
Scattering Method 11 D
band Phased Array Antenna Module for 5G Backhaul 12 Sub
THz Transceiver Design for Future Generation Mobile Communications 13 Ka
Band GaN
on
SiC Power Amplifier for High EIRP Satellite Phased Antenna Array 14 InP on Si Technologies for Next
Generation Optical Communication High
speed Analog Front
Ends 15 150 nm Gallium Nitride on Silicon Carbide Technology for High
power 5G New Radio Applications 16 Post
process Substrate Porosification for RF Applications 17 A Multi
standard RF Bandpass Sigma
Delta ADC 18 D
band RF Architecture for Beyond 5G Wireless Networks: Specifications, Challenges, and Key Enabling Technologies 19 E
band and D
band VCOs: Distributed Tank Design Methodology, Bufferless Approach 20 2.5D, 3D Assembly Technologies for RF, mmW and Sub
THz Heterogeneous Systems 21 Heterointegration Approaches for InP
HBT Technologies for 5G Applications and Beyond 22 RF
Heterointegration at Wafer
level and Panel
level for mmWave Applications 23 SiGe BiCMOS & III
V Technologies Heterogeneous Integration Challenges 24 Advanced Packaging Solutions for mmWave Applications 25 Modular 3D mmW and THz Packaging Concepts and Technologies 26 LDS and AMP Processes for RF Antenna in Package (AiP) Applications in the E
and D
Bands 27 Sub
THz Antenna and Package Integration for Miniaturized Surface
Mount Device Modules Index