Kinetic Studies in GeO2/Ge System - Wang, Sheng-Kai
72,99 €
inkl. MwSt.
Versandkostenfrei*
Versandfertig in 1-2 Wochen
payback
36 °P sammeln
  • Broschiertes Buch

This title investigates reaction kinetics in GeO2/Ge systems, aiming to demonstrate the fundamentals of the GeO2/Ge interface and to give insight into the distinctive features and performance of Ge (germanium) applied to advanced complementary metal oxide semiconductor (CMOS) devices.

Andere Kunden interessierten sich auch für
Produktbeschreibung
This title investigates reaction kinetics in GeO2/Ge systems, aiming to demonstrate the fundamentals of the GeO2/Ge interface and to give insight into the distinctive features and performance of Ge (germanium) applied to advanced complementary metal oxide semiconductor (CMOS) devices.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Autorenporträt
Sheng-Kai Wang is a professor in the Institute of Microelectronics at the Chinese Academy of Sciences (IMECAS), China, and Director General of the Youth Innovation Promotion Association of IMECAS. He has been engaged in Ge, III-V, and SiC in MOS technology for years and has published more than 100 papers and authorized more than 40 patents.