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  • Produktbild: Lateral Alignment of Epitaxial Quantum Dots
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Lateral Alignment of Epitaxial Quantum Dots

Aus der Reihe NanoScience and Technology

195,99 €

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Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

25.11.2010

Abbildungen

XV, 707 p.

Herausgeber

Oliver G. Schmidt

Verlag

Springer Berlin

Seitenzahl

707

Maße (L/B/H)

23,5/15,5/3,9 cm

Gewicht

1077 g

Auflage

Softcover reprint of hardcover 1st ed. 2007

Sprache

Englisch

ISBN

978-3-642-07991-7

Beschreibung

Portrait

The author was awarded the Philip-Morris Research Award in 2002.

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

25.11.2010

Abbildungen

XV, 707 p.

Herausgeber

Oliver G. Schmidt

Verlag

Springer Berlin

Seitenzahl

707

Maße (L/B/H)

23,5/15,5/3,9 cm

Gewicht

1077 g

Auflage

Softcover reprint of hardcover 1st ed. 2007

Sprache

Englisch

ISBN

978-3-642-07991-7

Herstelleradresse

Springer-Verlag KG
Sachsenplatz 4-6
1201 Wien
AT

Email: ProductSafety@springernature.com

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  • Produktbild: Lateral Alignment of Epitaxial Quantum Dots
  • Produktbild: Lateral Alignment of Epitaxial Quantum Dots
  • Lateral Self-Alignment.- Physical Mechanisms of Self-Organized Formation of Quantum Dots.- Routes Toward Lateral Self-Organization of Quantum Dots: the Model System SiGe on Si(001).- Short-Range Lateral Ordering of GeSi Quantum Dots Due to Elastic Interactions.- Hierarchical Self-Assembly of Lateral Quantum-Dot Molecules Around Nanoholes.- Energetics and Kinetics of Self-Organized Structure Formation in Solution Growth – the SiGe/Si System.- Ge Quantum Dot Self-Alignment on Vicinal Substrates.- Lateral Arrangement of Ge Self-Assembled Quantum Dots on a Partially Relaxed SixGe1?x Buffer Layer.- Ordering of Wires and Self-Assembled Dots on Vicinal Si and GaAs (110) Cleavage Planes.- Stacking and Ordering in Self-Organized Quantum Dot Multilayer Structures.- Self-Organized Anisotropic Strain Engineering for Lateral Quantum Dot Ordering.- Towards Quantum Dot Crystals via Multilayer Stacking on Different Indexed Surfaces.- Forced Alignment.- One-, Two-, and Three-Dimensionally Ordered GeSi Islands Grown on Prepatterned Si (001) Substrates.- Ordered SiGe Island Arrays: Long Range Material Distribution and Possible Device Applications.- Nanoscale Lateral Control of Ge Quantum Dot Nucleation Sites on Si(001) Using Focused Ion Beam Implantation.- Ge Nanodroplets Self-Assembly on Focused Ion Beam Patterned Substrates.- Metallization and Oxidation Templating of Surfaces for Directed Island Assembly.- Site Control and Selective-Area Growth Techniques of In As Quantum Dots with High Density and High Uniformity.- In(Ga)As Quantum Dot Crystals on Patterned GaAs(001) Substrates.- Directed Arrangement of Ge Quantum Dots on Si Mesas by Selective Epitaxial Growth.- Directed Self-Assembly of Quantum Dots by Local-Chemical-Potential Control via Strain Engineering on PatternedSubstrates.- Structural and Luminescence Properties of Ordered Ge Islands on Patterned Substrates.- Formation of Si and Ge Nanostructures at Given Positions by Using Surface Microscopy and Ultrathin SiO2 Film Technology.- Pyramidal Quantum Dots Grown by Organometallic Chemical Vapor Deposition on Patterned Substrates.- Large-Scale Integration of Quantum Dot Devices on MBE-Based Quantum Wire Networks.- GaAs and InGaAs Position-Controlled Quantum Dots Fabricated by Selective-Area Metalloorganic Vapor Phase Epitaxy.- Spatial InAs Quantum Dot Positioning in GaAs Microdisk and Posts.