Low-Dimensional Nanoelectronic Devices
Theoretical Analysis and Cutting-Edge Research
Herausgeber: Sarkar, Angsuman; Deyasi, Arpan
Low-Dimensional Nanoelectronic Devices
Theoretical Analysis and Cutting-Edge Research
Herausgeber: Sarkar, Angsuman; Deyasi, Arpan
- Gebundenes Buch
- Merkliste
- Auf die Merkliste
- Bewerten Bewerten
- Teilen
- Produkt teilen
- Produkterinnerung
- Produkterinnerung
Provides cutting-edge research on nanoelectronics and photonic devices and their application in future integrated circuits and detailed theoretical and analytical models of solving the problems of various nanodevices.
Andere Kunden interessierten sich auch für
- John P XanthakisElectronic Conduction181,99 €
- Nanoscopy and Nanospectroscopy178,99 €
- Daniel H NicholsPhysics for Technology, Second Edition211,99 €
- Supriyo BandyopadhyayIntroduction to Spintronics202,99 €
- Nanotechnology and Photovoltaic Devices180,99 €
- Junichiro InoueGraphene in Spintronics180,99 €
- Gourab MajumdarPower Devices for Efficient Energy Conversion167,99 €
-
-
-
Provides cutting-edge research on nanoelectronics and photonic devices and their application in future integrated circuits and detailed theoretical and analytical models of solving the problems of various nanodevices.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Produktdetails
- Produktdetails
- Verlag: Apple Academic Press
- Seitenzahl: 356
- Erscheinungstermin: 27. Oktober 2022
- Englisch
- Abmessung: 229mm x 152mm x 22mm
- Gewicht: 671g
- ISBN-13: 9781774638668
- ISBN-10: 1774638665
- Artikelnr.: 64621889
- Herstellerkennzeichnung
- Libri GmbH
- Europaallee 1
- 36244 Bad Hersfeld
- 06621 890
- Verlag: Apple Academic Press
- Seitenzahl: 356
- Erscheinungstermin: 27. Oktober 2022
- Englisch
- Abmessung: 229mm x 152mm x 22mm
- Gewicht: 671g
- ISBN-13: 9781774638668
- ISBN-10: 1774638665
- Artikelnr.: 64621889
- Herstellerkennzeichnung
- Libri GmbH
- Europaallee 1
- 36244 Bad Hersfeld
- 06621 890
Angsuman Sarkar, PhD, is Professor of Electronics and Communication Engineering at Kalyani Government Engineering College, India. He earlier served at Jalpaiguri Government Engineering College & Kalyani Government Engineering College as Lecturer, Assistant Professor, and Associate Professor in the Electrical and Computer Engineering Department for more than 20 years. His current research interest includes the study of short channel effects of sub 100nm MOSFETs and nanodevice modeling. He is a member of IEEE, the Indian Society for Technical Education, and the Institution of Engineers India, and he serves as Chairman of the IEEE Electron Device Society, Kolkata Chapter, India. He has authored several books and has contributed many book chapters, over 70 journal papers in international refereed journals, and over 57 research papers in national and international conferences. Arpan Deyasi, MTech, is Assistant Professor in the Department of Electronics and Communication Engineering at the RCC Institute of Information Technology, India. He has 14 years of professional experience in academics and industry. His work is in the field of semiconductor nanostructure and semiconductor photonics. He has published more than 150 peer-reviewed research papers in journals and conferences as well as book chapters, and has edited or co-edited five books. He is associated with several international and national conferences and was a general chair for several conferences. He is a reviewer for several journals and conferences in India and abroad. He is a member of IEEE, IE(I), Optical Society of India, IETE, ISTE, and secretary of the IEEE Electron Device Society (Kolkata Chapter).
1. Design Topologies for Low-Frequency and Low-Noise Neural Signal
Processing 2. Sensing Using Memristive Approach, Governing Physics, and
Instrumentation Challenges 3. Analog and RF Performance Analysis and Its
Sensitivity to Critical Geometrical Parameters in Junctionless Accumulation
Mode Bulk FinFET 4. Charge Storage Mechanism in Proteotronic Capacitors 5.
Recent Advancement in Graphene-Based Metasurface Structures 6. Silicon
Nanotube FETs: From Device Concept to Analytical Model Development 7.
Techniques for Deposition of Diamond-Like Carbon and Their Potential
Applications in Teaching and Training Materials Engineers 8. Modeling
Approach of Work-Function Engineered Tunnel Field Effect Transistors: A
Physical Insight 9. Thin-Film Photovoltaic Devices with Asymmetric
Heterocontact Geometries 10. Memristor: The Missing Fourth Circuit
Component 11. Technological Development of Graphene and Graphene
Nanocomposite-Based Supercapacitor Electrode 12. Negative Capacitance Field
Effect Transistors for Future Low Power Electronics
Processing 2. Sensing Using Memristive Approach, Governing Physics, and
Instrumentation Challenges 3. Analog and RF Performance Analysis and Its
Sensitivity to Critical Geometrical Parameters in Junctionless Accumulation
Mode Bulk FinFET 4. Charge Storage Mechanism in Proteotronic Capacitors 5.
Recent Advancement in Graphene-Based Metasurface Structures 6. Silicon
Nanotube FETs: From Device Concept to Analytical Model Development 7.
Techniques for Deposition of Diamond-Like Carbon and Their Potential
Applications in Teaching and Training Materials Engineers 8. Modeling
Approach of Work-Function Engineered Tunnel Field Effect Transistors: A
Physical Insight 9. Thin-Film Photovoltaic Devices with Asymmetric
Heterocontact Geometries 10. Memristor: The Missing Fourth Circuit
Component 11. Technological Development of Graphene and Graphene
Nanocomposite-Based Supercapacitor Electrode 12. Negative Capacitance Field
Effect Transistors for Future Low Power Electronics
1. Design Topologies for Low-Frequency and Low-Noise Neural Signal
Processing 2. Sensing Using Memristive Approach, Governing Physics, and
Instrumentation Challenges 3. Analog and RF Performance Analysis and Its
Sensitivity to Critical Geometrical Parameters in Junctionless Accumulation
Mode Bulk FinFET 4. Charge Storage Mechanism in Proteotronic Capacitors 5.
Recent Advancement in Graphene-Based Metasurface Structures 6. Silicon
Nanotube FETs: From Device Concept to Analytical Model Development 7.
Techniques for Deposition of Diamond-Like Carbon and Their Potential
Applications in Teaching and Training Materials Engineers 8. Modeling
Approach of Work-Function Engineered Tunnel Field Effect Transistors: A
Physical Insight 9. Thin-Film Photovoltaic Devices with Asymmetric
Heterocontact Geometries 10. Memristor: The Missing Fourth Circuit
Component 11. Technological Development of Graphene and Graphene
Nanocomposite-Based Supercapacitor Electrode 12. Negative Capacitance Field
Effect Transistors for Future Low Power Electronics
Processing 2. Sensing Using Memristive Approach, Governing Physics, and
Instrumentation Challenges 3. Analog and RF Performance Analysis and Its
Sensitivity to Critical Geometrical Parameters in Junctionless Accumulation
Mode Bulk FinFET 4. Charge Storage Mechanism in Proteotronic Capacitors 5.
Recent Advancement in Graphene-Based Metasurface Structures 6. Silicon
Nanotube FETs: From Device Concept to Analytical Model Development 7.
Techniques for Deposition of Diamond-Like Carbon and Their Potential
Applications in Teaching and Training Materials Engineers 8. Modeling
Approach of Work-Function Engineered Tunnel Field Effect Transistors: A
Physical Insight 9. Thin-Film Photovoltaic Devices with Asymmetric
Heterocontact Geometries 10. Memristor: The Missing Fourth Circuit
Component 11. Technological Development of Graphene and Graphene
Nanocomposite-Based Supercapacitor Electrode 12. Negative Capacitance Field
Effect Transistors for Future Low Power Electronics