Low Power and Reliable SRAM Memory Cell and Array Design

Herausgegeben:Ishibashi, Koichiro; Osada, Kenichi

• Broschiertes Buch

Produktbeschreibung

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

Produktdetails

• Springer Series in Advanced Microelectronics 31
• Verlag: Springer / Springer Berlin Heidelberg / Springer, Berlin
• Artikelnr. des Verlages: 978-3-642-27018-5
• 2011
• Seitenzahl: 156
• Erscheinungstermin: 27. November 2013
• Englisch
• Abmessung: 235mm x 155mm x 9mm
• Gewicht: 258g
• ISBN-13: 9783642270185
• ISBN-10: 3642270182
• Artikelnr.: 39398290

Inhaltsangabe

Preface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future Technologies

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Preface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future Technologies