Andere Kunden interessierten sich auch für
![Device Modeling & Circuit Design for ZTO TFTs]( "Device Modeling & Circuit Design for ZTO TFTs")
Device Modeling & Circuit Design for ZTO TFTs32,99 €![Extreme Temperature Memory Design Using Silicon On Sapphire Technology]( "Extreme Temperature Memory Design Using Silicon On Sapphire Technology")
Extreme Temperature Memory Design Using Silicon On Sapphire Technology38,99 €![Optimization of RF-Transistor from Device to Circuit Level for PAs]( "Optimization of RF-Transistor from Device to Circuit Level for PAs")
Optimization of RF-Transistor from Device to Circuit Level for PAs32,99 €![A Design to Development Perspective of Embedded Systems]( "A Design to Development Perspective of Embedded Systems")
A Design to Development Perspective of Embedded Systems40,99 €![Digital Image Watermarking: Transform Domain Perspective]( "Digital Image Watermarking: Transform Domain Perspective")
Digital Image Watermarking: Transform Domain Perspective32,99 €![A Novel ROM Design for High Speed Direct Digital Frequency Synthesizer]( "A Novel ROM Design for High Speed Direct Digital Frequency Synthesizer")
A Novel ROM Design for High Speed Direct Digital Frequency Synthesizer22,99 €![Design of direct digital frequency synthesizer & transmultiplexer]( "Design of direct digital frequency synthesizer & transmultiplexer")
Design of direct digital frequency synthesizer & transmultiplexer36,99 €
This work aims to exploit the potential of nano scale memories like MTJ based Magnetoresistive RAM for use in cell phone architectures by replacing age old flash memories through a series of simulations performed using various tools. Magnetoresistive memory (MRAM) is one of the forerunners of the nanotechnology enabled memories lined to replace the traditional memories like Flash, DRAM and SRAM. MRAMs are based on the phenomenon of spin dependent tunneling in magnetic tunnel junctions (MTJs). It stores data in the magnetization of a magnetic layer as opposed to electrical charge in conventional RAMs. Yet the read-out of the MRAM is electrical. It is claimed to offer something close to the speed of SRAM, with a density approaching that of single-transistor DRAM and the ability to store information when power is removed, like flash memory or EEPROM.