Thin films of copper nitride received much attention because of their wide range of applications such as write-once optical recording, insulating barrier in magnetic tunnel junctions, generating microscopic copper lines by maskless laser writing or copper dots by maskless electron beam writing. The physical properties of the deposited films depend mainly on the deposition technique employed and the process parameters maintained during the growth of the films. This book restrains the optimized preparation condition of copper nitride films using dc reactive magnetron sputtering technique by precisely controlling the process parameters, and investigated the physical properties of the films. The promising approach to prepare the device quality copper nitride films for optical recording devices was discussed clearly in this book.