Symposium M, 'Materials and Technology for Nonvolatile Memories', was held November 30-December 5 at the 2014 MRS Fall Meeting in Boston.Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Part I. Advanced Flash Memories: 1. Mixed-ionic-electronic-conduction (MIEC)-based access devices for 3D multilayer crosspoint memory; 2. MANOS erase performance dependence on nitrogen annealing conditions; Part II. Resistive Switching Memories (ReRAM): 3. Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO3 thin films for non-volatile memory applications; 4. Influence of graphene interlayers on electrode-electrolyte interfaces in resistive random accesses memory cells; 5. Nanosecond fast switching processes observed in gapless-type, Ta2O5-based atomic switches; 6. XRD analysis of TRAM composed from [Sb2Te3/GeTe] superlattice film and its switching characteristics; 7. Effect of morphological change on unipolar and bipolar switching characteristics in Pr0.7Ca0.3MnO3 based RRAM; 8. Experimental and theoretical investigation of minimization of forming-induced variability in resistive memory devices; 9. Material and device parameters influencing multi-level resistive switching of room temperature grown titanium oxide layers; 10. A comprehensive study of effect of composition on resistive switching of HfxAl1-xOy based RRAM devices by combinatorial sputtering; Part III. Magnetoresistive Random Access Memories (MRAM): 11. Perpendicular magnetic anisotropy on W-based spin-orbit torque CoFeB MgO MRAM stacks; 12. Strain induced super-paramagnetism in Cr2O3 in the ultra thin film limit; Part IV. Ferroelectric Random Access Memories (FeRAM): 13. Giant self-polarization in FeRAM element based on sol-gel PZT films; 14. The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties; 15. Chemical fluid deposition of Hf-Zr-O-based thin films using supercritical carbon dioxide fluid; 16. Ferroelectricity in strategically synthesized Pb-free LiNbO3-type ZnSnO3 nanostructure arrayed thick films; 17. Measurements of polarization switching in LiNbO3-type ZnSnO3/ZnO nanocomposite thin films; Part V. Polymer Memories and Emerging Materials: 18. Photo-controllable resistive memory based on polymer materials; 19. Determining the efficiency of fast ultrahigh-density writing of low-conductivity patterns on semiconducting polymers; 20. Photoelectron spectroscopy characterization and computational modeling of gadolinium nitride thin films synthesized by chemical vapor deposition; 21. Chemo-ionic-conformational memory from reactive dense gels: a way to explore new multivalent memories and brain memory.
Part I. Advanced Flash Memories: 1. Mixed-ionic-electronic-conduction (MIEC)-based access devices for 3D multilayer crosspoint memory; 2. MANOS erase performance dependence on nitrogen annealing conditions; Part II. Resistive Switching Memories (ReRAM): 3. Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO3 thin films for non-volatile memory applications; 4. Influence of graphene interlayers on electrode-electrolyte interfaces in resistive random accesses memory cells; 5. Nanosecond fast switching processes observed in gapless-type, Ta2O5-based atomic switches; 6. XRD analysis of TRAM composed from [Sb2Te3/GeTe] superlattice film and its switching characteristics; 7. Effect of morphological change on unipolar and bipolar switching characteristics in Pr0.7Ca0.3MnO3 based RRAM; 8. Experimental and theoretical investigation of minimization of forming-induced variability in resistive memory devices; 9. Material and device parameters influencing multi-level resistive switching of room temperature grown titanium oxide layers; 10. A comprehensive study of effect of composition on resistive switching of HfxAl1-xOy based RRAM devices by combinatorial sputtering; Part III. Magnetoresistive Random Access Memories (MRAM): 11. Perpendicular magnetic anisotropy on W-based spin-orbit torque CoFeB MgO MRAM stacks; 12. Strain induced super-paramagnetism in Cr2O3 in the ultra thin film limit; Part IV. Ferroelectric Random Access Memories (FeRAM): 13. Giant self-polarization in FeRAM element based on sol-gel PZT films; 14. The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties; 15. Chemical fluid deposition of Hf-Zr-O-based thin films using supercritical carbon dioxide fluid; 16. Ferroelectricity in strategically synthesized Pb-free LiNbO3-type ZnSnO3 nanostructure arrayed thick films; 17. Measurements of polarization switching in LiNbO3-type ZnSnO3/ZnO nanocomposite thin films; Part V. Polymer Memories and Emerging Materials: 18. Photo-controllable resistive memory based on polymer materials; 19. Determining the efficiency of fast ultrahigh-density writing of low-conductivity patterns on semiconducting polymers; 20. Photoelectron spectroscopy characterization and computational modeling of gadolinium nitride thin films synthesized by chemical vapor deposition; 21. Chemo-ionic-conformational memory from reactive dense gels: a way to explore new multivalent memories and brain memory.
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