MBE Growth and Characterization of SiGe Nanoislands - Seker, Isa
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SiGe nanoislands have been grown by Molecular Beam Epitaxy (MBE) on Si (100) substrates with various layer designs and growth conditions. Multilayered thin films of these structures with different thicknesses were fabricated by changing the substrate temperature, Ge content, annealing temperature and annealing duration. Structural properties of the surfaces were examined by Reflection High Energy Electron Diffraction (RHEED), Grazing Angle X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The optical investigation was acquired by Dispersive Raman…mehr

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Produktbeschreibung
SiGe nanoislands have been grown by Molecular Beam Epitaxy (MBE) on Si (100) substrates with various layer designs and growth conditions. Multilayered thin films of these structures with different thicknesses were fabricated by changing the substrate temperature, Ge content, annealing temperature and annealing duration. Structural properties of the surfaces were examined by Reflection High Energy Electron Diffraction (RHEED), Grazing Angle X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The optical investigation was acquired by Dispersive Raman Spectroscopy and the electrical characterization was performed by Semiconductor Analysis method. It has been observed that the surface morphology of the nanostructures can be tuned by changing their layer designs and growth parameters.
Autorenporträt
EDUCATIONPh. D., Physics, Fatih University, Istanbul, Turkey, February 2015M.S., Physics, Fatih University, September 2009 B.S., Physics Education, METU, Ankara, Turkey, August 2004PROFESSIONAL EXPERIENCESpecialist, Bionano Technology R&D Center, Fatih University (2013-)Research Assistant, Physics Department, Fatih University (2008 - 2013)