Metal Oxide-Based Heterostructures
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Metal Oxide-Based Heterostructures: Fabrication and Applications provides information on synthesis strategies, structural and hierarchical features, morphological characteristics of metal oxide-based heterostructures, and their diverse applications. This book begins with an introduction to the various multidimensional heterostructures, synthesis aspects, and techniques used to control the formation of heterostructures. Then, the impact of synthesis routes on the formation of mixed metal oxide heterostructures and their properties are analyzed. The effect of nonmetal doping, metal doping, and…mehr

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Produktbeschreibung
Metal Oxide-Based Heterostructures: Fabrication and Applications provides information on synthesis strategies, structural and hierarchical features, morphological characteristics of metal oxide-based heterostructures, and their diverse applications. This book begins with an introduction to the various multidimensional heterostructures, synthesis aspects, and techniques used to control the formation of heterostructures. Then, the impact of synthesis routes on the formation of mixed metal oxide heterostructures and their properties are analyzed. The effect of nonmetal doping, metal doping, and composites of metal oxide heterostructures on the properties of heterostructures is also addressed and that also includes opportunities for optimization of the material's performance for specific applications. Special attention is given to the surface characteristics of the metal oxide heterostructures and their impact on the material's performance, and the applications of metal oxide heterostructures in various fields such as environmental remediation, sensing, organic catalysis, photovoltaics, light emitting materials, and hydrogen production.
Autorenporträt
Dr. Bernabé Marí Soucase is a Professor at the Department of Applied Physics at the Universitat Politècnica de València at Valencia, Spain. He is the principal investigator of the optoelectronics and semiconductor research team where their primary lines of investigation include doping of semiconductors by neutron transmutation, optical and electrical properties of III-V and III-VI semiconductors and the development of semiconductor devices.