Microstructure and Optoelectronics Characterizations of GaxSb1-x/GaAs - Jalaukhan, Ali;Alias, Maysoon;Al-Lamy, Hussein
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Developments of narrow gap semiconductor physics have been closely related to the development of the science and technology of infrared optical electronics in which narrow gap semiconductors have played a vital role in detectors and emitters, and other high speed devices. Antimony-based technology is very promising for low voltage millimeter-wave (mm-wave) integrated circuits (ICs), as well as very highspeed, low-power digital ICs. Among the many potential applications are digitally beam-steered phased array receivers, particularly those deployed in space; 80-160 Gbit/s optical communication…mehr

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Produktbeschreibung
Developments of narrow gap semiconductor physics have been closely related to the development of the science and technology of infrared optical electronics in which narrow gap semiconductors have played a vital role in detectors and emitters, and other high speed devices. Antimony-based technology is very promising for low voltage millimeter-wave (mm-wave) integrated circuits (ICs), as well as very highspeed, low-power digital ICs. Among the many potential applications are digitally beam-steered phased array receivers, particularly those deployed in space; 80-160 Gbit/s optical communication systems; unmanned reconnaissance vehicles; and mobile, battery-powered systems.
Autorenporträt
Ali Hussain Abdalrazzaq Jalaukhan.I was born in Kerbala , IRAQ at 1/1/1962.I have got B.Sc physics, university of Mosul, Iraq, 1983.M.Sc. solid state physics, university of Baghdad, Iraq , 1991 .Ph.D physics of thin films, university of Baghdad, Iraq, 2012.Now I am a Lecturer of medical physics at College of Medicine,Kerbala University