Raymond S Pengelly

Microwave Field-Effect Transistors

Theory, Design and Applications

• Gebundenes Buch

Produktbeschreibung

This third edition covers the use of MESFET devices in microwave circuits, such as low noise amplifiers, mixers, oscillators, power amplifiers, switches and multipliers. This text is a classic reference for all engineers involved in the development of solid state microwave devices.

---

This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations.

---

Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.

Produktdetails

• Verlag: Institution of Engineering & Technology
• 3rd Revised edition
• Seitenzahl: 704
• Erscheinungstermin: 30. Juni 1994
• Englisch
• Abmessung: 229mm x 160mm x 48mm
• Gewicht: 1225g
• ISBN-13: 9781884932502
• ISBN-10: 1884932509
• Artikelnr.: 23842794

Inhaltsangabe

Chapter 1: Introduction
Chapter 2: GaAs FET Theory-Small Signal
Chapter 3: GaAs FET Theory-Power
Chapter 4: Requirements and Fabrication of GaAs FETs
Chapter 5: The Design of Transistor Amplifiers
Chapter 6: FET Mixers
Chapter 7: GaAs FET Oscillators
Chapter 8: FET and IC Packaging
Chapter 9: Novel FET Circuits
Chapter 10: Gallium Arsenide Integrated Circuits
Chapter 11: Other III-V Materials and Devices