Farzan Jazaeri (Ecole Polytechnique Federale de Lausanne), Jean-Michel Sallese (Ecole Polytechnique Federale de Lausanne)

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors

• Gebundenes Buch

Produktbeschreibung

The first of its kind, this is a detailed introduction to this new and fast-developing field. It covers the design, modeling, and operation of junctionless field effect transistors (FETs), as well as advantages and limitations. It is Ideal for graduate students and researchers working in semiconductor nanotechnology.

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Produktdetails

• Verlag: Cambridge University Press
• Seitenzahl: 252
• Erscheinungstermin: 9. Mai 2018
• Englisch
• Abmessung: 184mm x 241mm x 16mm
• Gewicht: 650g
• ISBN-13: 9781107162044
• ISBN-10: 1107162041
• Artikelnr.: 49140535

Autorenporträt

Farzan Jazaeri is a Scientist at the Ecole Polytechnique Fédérale de Lausanne where his research interests focus on semiconductor devices and physics, and particularly the modeling and fabrication of field-effect transistors.

Inhaltsangabe

1. Introduction
2. Review on modeling junctionless FETs
3. The EPFL charge-based model of junctionless field-effect transistors
4. Model driven design - space of junctionless FETs
5. Generalization of the charge based model: accounting for inversion layers
6. Predicted performances of junctionless FETs
7. Short channel effects in symmetric junctionless double-gate FETs
8. Modeling AC operation in symmetric double-gate and nanowire JL FETs
9. Modeling asymmetric operation of double-gate junctionless FETs
10. Modeling noise behavior in junctionless FETs
11. Carrier mobility extraction methodology in JL and inversion mode FETs
12. Revisiting the Junction FET: a junctionless FET with an ¿ gate capacitance
13. Modeling junctionless FET with interface traps targeting biosensor applications
Appendix A. Design - space of twin gate junctionless vertical slit FETs
Appendix B. Transient off-current in junctionless FETs
Appendix C. Derivatives of mobile charge density with respect to VGS and VDS
Appendix D. Global charge density at drain in depletion mode
Appendix E. Global charge density at drain in accumulation mode
Appendix F. The EPFL Junctionless MODEL ver.1.0.