The first of its kind, this is a detailed introduction to this new and fast-developing field. It covers the design, modeling, and operation of junctionless field effect transistors (FETs), as well as advantages and limitations. It is Ideal for graduate students and researchers working in semiconductor nanotechnology.
The first of its kind, this is a detailed introduction to this new and fast-developing field. It covers the design, modeling, and operation of junctionless field effect transistors (FETs), as well as advantages and limitations. It is Ideal for graduate students and researchers working in semiconductor nanotechnology.
Farzan Jazaeri is a Scientist at the Ecole Polytechnique Fédérale de Lausanne where his research interests focus on semiconductor devices and physics, and particularly the modeling and fabrication of field-effect transistors.
Inhaltsangabe
1. Introduction 2. Review on modeling junctionless FETs 3. The EPFL charge-based model of junctionless field-effect transistors 4. Model driven design - space of junctionless FETs 5. Generalization of the charge based model: accounting for inversion layers 6. Predicted performances of junctionless FETs 7. Short channel effects in symmetric junctionless double-gate FETs 8. Modeling AC operation in symmetric double-gate and nanowire JL FETs 9. Modeling asymmetric operation of double-gate junctionless FETs 10. Modeling noise behavior in junctionless FETs 11. Carrier mobility extraction methodology in JL and inversion mode FETs 12. Revisiting the Junction FET: a junctionless FET with an ¿ gate capacitance 13. Modeling junctionless FET with interface traps targeting biosensor applications Appendix A. Design - space of twin gate junctionless vertical slit FETs Appendix B. Transient off-current in junctionless FETs Appendix C. Derivatives of mobile charge density with respect to VGS and VDS Appendix D. Global charge density at drain in depletion mode Appendix E. Global charge density at drain in accumulation mode Appendix F. The EPFL Junctionless MODEL ver.1.0.
1. Introduction 2. Review on modeling junctionless FETs 3. The EPFL charge-based model of junctionless field-effect transistors 4. Model driven design - space of junctionless FETs 5. Generalization of the charge based model: accounting for inversion layers 6. Predicted performances of junctionless FETs 7. Short channel effects in symmetric junctionless double-gate FETs 8. Modeling AC operation in symmetric double-gate and nanowire JL FETs 9. Modeling asymmetric operation of double-gate junctionless FETs 10. Modeling noise behavior in junctionless FETs 11. Carrier mobility extraction methodology in JL and inversion mode FETs 12. Revisiting the Junction FET: a junctionless FET with an ¿ gate capacitance 13. Modeling junctionless FET with interface traps targeting biosensor applications Appendix A. Design - space of twin gate junctionless vertical slit FETs Appendix B. Transient off-current in junctionless FETs Appendix C. Derivatives of mobile charge density with respect to VGS and VDS Appendix D. Global charge density at drain in depletion mode Appendix E. Global charge density at drain in accumulation mode Appendix F. The EPFL Junctionless MODEL ver.1.0.
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