The book has twelve chapters. Starting from the overview of various aspects of device modeling for circuit simulators, a brief but complete review of semiconductor device physics and pn junction theory required for understanding MOSFET models is covered. The MOS transistor characteristics as applied to current MOS technologies are then discussed. First, the theory of MOS capacitors that is essential for understanding of MOS transistor models are discussed. This is followed by different types of MOSFET models such as treshold voltage, DC (steady-state), AC, and reliability models and the corresponding model parameter determination. The diode and MOSFET models as implemented in Berkeley SPICE, are also covered. Finally, the statistical variation of model parameters due to process variations are discussed. Das Buch behandelt die mathematische Modellierung von MOS Transistoren für die VLSI Simulierung von MOS integrierten Schaltkreisen. Ausgehend von sehr einfachen bis zu sehr differenzierten Annahmen werden die verschiedenen Modelle dargestellt und berechnet. Das Buch wendet sich an Studenten und Ingenieure, die sich mit dem Entwurf elektronischer Schaltungen beschäftigen.