The features of the effects arising in silicon and germanium single crystals under the influence of nuclear irradiation, various regimes of heat treatment, and uniaxial mechanical loads were considered; the regularities of the processes of formation and transformation of defects as a result of irradiation and thermal annealings were established; the specificity of interdefect and impurity-defect interactions was analyzed in connection with the presence of background and dopant impurities in crystals in a wide range of concentrations; the features of the influence of surface electronic processes on the formation of silicon surface-barrier detector structures were revealed; the slow regimes of etching for the manufacture of detectors of plane-parallel geometry were developed; the surface-barrier technology for manufacturing silicon spectrometric detectors was optimized. The monograph is intended for researchers and specialists in the field of radiation physics of semiconductors andsolid-state physics.
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Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.