Hei Wong

Nano-CMOS Gate Dielectric Engineering

• Gebundenes Buch

Produktbeschreibung

This book is a systematic review of high-K gate dielectric materials for CMOS chips (complementary metaloxide semiconductors), which are used in image sensors and data convertors (amplifiers, digital camera sensors, etc). Scaling CMOS devices down to the nanoscale creates new materials challenges, and one effective response is to introduce novel materials such as High K dielectrics. The book presents the fundamental physics and properties of High-K materials and how they can be fabricated and used in Nano CMOS devices.

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Covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, this text systematically describes how the fundamental electronic structures and other material properties of the transition and rare earth metals affect the electrical properties of the dielectric films, the dielectric/silicon and the dielectric/metal gate interfaces, and the resulting device properties. Specific topics include the problems and solutions encountered with high-k material thermal stability, defect density, and poor initial interface with silicon substrate. The text also addresses the essence of thin film deposition, etching, and process integration of high-k materials in an actual CMOS process.

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Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.

Produktdetails

• Verlag: CRC Press
• Seitenzahl: 248
• Erscheinungstermin: 28. November 2011
• Englisch
• Abmessung: 229mm x 160mm x 23mm
• Gewicht: 540g
• ISBN-13: 9781439849590
• ISBN-10: 1439849595
• Artikelnr.: 33454317

Autorenporträt

Hei Wong

Inhaltsangabe

Overview of CMOS Technology. High-k Dielectrics. Complex Forms of High-k
Oxides. Dielectric Interfaces. Impacts on Device Operation. Fabrication
Issues. Conclusions. Appendix A: Fundamental Physical Constants and Unit
Conversions. Appendix B: Properties of Si and SiO2. Index.