Provides the theoretical background and the physical insight needed to understand new and future developments in nanoscale CMOS technologies.Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
David Esseni is an Associate Professor of Electronics at the University of Udine, Italy.
Inhaltsangabe
1. Introduction 2. Bulk semiconductors and the semi-classical model 3. Quantum confined inversion layers 4. Carrier scattering in silicon MOS transistors 5. The Boltzmann transport equation 6. The Monte Carlo method for the Boltzmann transport equation 7. Simulation of bulk and SOI silicon MOSFETs 8. MOS transistors with arbitrary crystal orientation 9. MOS transistors with strained silicon channels 10. MOS transistors with alternative materials Appendix A. Mathematical definitions and properties Appendix B. Integrals and transformations over a finite area A Appendix C. Calculation of the equi-energy lines with the k-p model Appendix D. Matrix elements beyond the envelope function approximation Appendix E. Charge density produced by a perturbation potential.
1. Introduction 2. Bulk semiconductors and the semi-classical model 3. Quantum confined inversion layers 4. Carrier scattering in silicon MOS transistors 5. The Boltzmann transport equation 6. The Monte Carlo method for the Boltzmann transport equation 7. Simulation of bulk and SOI silicon MOSFETs 8. MOS transistors with arbitrary crystal orientation 9. MOS transistors with strained silicon channels 10. MOS transistors with alternative materials Appendix A. Mathematical definitions and properties Appendix B. Integrals and transformations over a finite area A Appendix C. Calculation of the equi-energy lines with the k-p model Appendix D. Matrix elements beyond the envelope function approximation Appendix E. Charge density produced by a perturbation potential.
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