Nanoscale Semiconductor Memories

Technology and Applications
Herausgeber: Iniewski, Krzysztof; Kurinec, Santosh K.

• Gebundenes Buch

Produktbeschreibung

Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.

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Produktdetails

• Verlag: CRC Press
• Seitenzahl: 450
• Erscheinungstermin: 12. Dezember 2013
• Englisch
• Abmessung: 240mm x 161mm x 29mm
• Gewicht: 839g
• ISBN-13: 9781466560604
• ISBN-10: 1466560606
• Artikelnr.: 38020791

Autorenporträt

Kurinec, Santosh K.; Iniewski, Krzysztof

Inhaltsangabe

SRAM: The Benchmark of the VLSI Technology. Multiple Upsets in SRAMs
Processed in Decananometric CMOS Technologies. Radiation Hardened by Design
SRAM Strategies for TID and SEE Mitigation. Dynamic Random Access Memory.
DRAM Technology. Concepts of Capacitor-less 1T-DRAM and Unified Memory on
SOI. A-RAM family: Novel Capacitor-less 1T-DRAM Cells for Beyond 22nm
Nodes. Novel Flash Memory. Quantum Dot Based Flash Memories. Magnetic
Memory. Spin-Transfer-Torque MRAM. Magnetic Domain Wall "Racetrack" Memory.
Phase Change Memory. Phase Change Memory (PCM) Modeling and Simulation.
Phase Change Memory Devices and Electrothermal Modeling. Resistive Random
Access Memory. Non-volatile Memory Device: Resistive Random Access Memory.
Nano-scale Resistive Random Access Memory: Materials, Devices and Circuits.