Nanoscale Semiconductor Memories

Technology and Applications
Herausgeber: Kurinec, Santosh K; Iniewski, Krzysztof

• Gebundenes Buch

Produktbeschreibung

The book has two-fold intentions. Firstly it assembles the latest research in the field of nanoscale memories technology in one place. And secondly, it exposes the reader to myriad applications that nanoscale memories technology has enabled. The book is meant for advanced graduate research work or for academicians and researchers. This way the book has a widespread appeal, including practicing engineers, academicians, research scientists, and senior graduate students. Nanoscale memories today have a widespread application range.

Produktdetails

• Verlag: Taylor & Francis
• Seitenzahl: 448
• Erscheinungstermin: 12. Dezember 2013
• Englisch
• Abmessung: 239mm x 160mm x 30mm
• Gewicht: 771g
• ISBN-13: 9781466560604
• ISBN-10: 1466560606
• Artikelnr.: 38020791

Autorenporträt

Kurinec, Santosh K.; Iniewski, Krzysztof

Inhaltsangabe

SRAM: The Benchmark of the VLSI Technology. Multiple Upsets in SRAMs
Processed in Decananometric CMOS Technologies. Radiation Hardened by Design
SRAM Strategies for TID and SEE Mitigation. Dynamic Random Access Memory.
DRAM Technology. Concepts of Capacitor-less 1T-DRAM and Unified Memory on
SOI. A-RAM family: Novel Capacitor-less 1T-DRAM Cells for Beyond 22nm
Nodes. Novel Flash Memory. Quantum Dot Based Flash Memories. Magnetic
Memory. Spin-Transfer-Torque MRAM. Magnetic Domain Wall "Racetrack" Memory.
Phase Change Memory. Phase Change Memory (PCM) Modeling and Simulation.
Phase Change Memory Devices and Electrothermal Modeling. Resistive Random
Access Memory. Non-volatile Memory Device: Resistive Random Access Memory.
Nano-scale Resistive Random Access Memory: Materials, Devices and Circuits.