Narrow Gap Semiconductors

Proceedings of the 12th International Conference on Narrow Gap Semiconductors
Herausgeber: Kono, Junichiro; Leotin, Jean

• Gebundenes Buch

Produktbeschreibung

Bringing together researchers from twenty-five countries, Narrow Gap Semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors discusses the recent advances and discoveries in the science and technology of narrow gap semiconductors (NGS). In particular, it explores the latest findings in the fundamental physics of narrow gap materials and quantum heterostructures as well as device physics, including mid- and far-infrared lasers, detectors, and spintronic devices. This volume forms a solid presentation in several important areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. It examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe. Several chapters cover carbon nanotubes and spintronics, along with spin-orbit coupling, nonparabolicity, and large g-factors. The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges. Continuing the high-quality tradition of this series, Narrow Gap Semiconductors covers all aspects of NGS to offer an authoritative, well-balanced perspective of this evolving field.

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Produktdetails

• Verlag: CRC Press
• Seitenzahl: 636
• Erscheinungstermin: 25. Mai 2006
• Englisch
• Abmessung: 240mm x 161mm x 38mm
• Gewicht: 1111g
• ISBN-13: 9780750310161
• ISBN-10: 0750310162
• Artikelnr.: 21578718

Autorenporträt

Junichiro Kono, Jean Leotin

Inhaltsangabe

Part I: Spin-Related Phenomena; Ferromagnetism in Narrow Gap
Semiconductors; Growth, Magnetic and Transport Studies of Ferromagnetic
GaMnSb Semiconductors; (Eu,Gd)Te ferromagnetic semiconductor layers - MBE
growth, magnetic and structural characterization; Electrical and magnetic
characterization of impurity states in diluted magnetic semiconductors Pb
1-x Ge x Te:Cr; Omnidirectional spin lifetime enhancement for spin device
applications; Side-Gate Control of Rashba Spin-Orbit Coupling in Channels
at Narrow Gap Hetero-Junctions; Kinetic and Zero Electric Field Confinement
and Rashba Splitting in Gated HgCdTe Accumulation Layers; Spin splittings
in Ga 1- x Al x As parabolic quantum wells controlled by electric field;
Anomalous spin splitting of shallow donor bound electrons in InAs-based
heterostructures under electrical injection conditions; Part I:
Investigation of electron spin states in InGaAs/InAlAs and InGaSb/InAlSb
heterostructures; Weak Anti-Localization in Sn-Doped InSb Thin Film Layers
on GaAs(100) Substrates; Determining the spin Hall conductance via charge
current and noise; Part II: Growth, Fabrication, Characterization & Theory;
InSb/InAs type II quantum dot structures for mid-IR laser applications;
Sb-based nanostructures for mid-IR applications; Phonons in InGaAs/AlGaAs
Quantum Dot Superlattices: a Raman study; Electronic Raman Scattering in
Self-organized InAs Quantum Dot Structures; Selection-rule breaking of
Raman scattering in InSb thin films grown on GaAs(001); Influence of growth
conditions on the optical and electrical properties of MOVPE-grown InAs 1-x
Sb x; InSb, InAs and In 2 O 3 nanowires grown by vapour transport with aid
of FIB Ga ions; Electrical and optical properties of hydrogen-passivated
GaSb; Spectral study of persistent photoconductivity in InAs/AlSb QW
heterostructures; Room-temperature electroluminescence of AlSb/InAs l.x Sb
x quantum wells grown by MOVPE; Application of quantum cascade lasers for
cyclotron resonance measurements in InAs x Sb 1-x alloys; Quantum Transport
in the Accumulation Layer at InSb/GaAs(100) Hetero-Interface; Optical
deformation potentials for PbSe and PbTe; Deformation potentials of a
semimetal; intersubband transitions in HgTe/Hg 1-x Cd x Te superlattices;
Magnetic contribution to the specific heat of IV-VI semimagnetic
semiconductors; Peculiarities of conductivity of PbSnTe(In) in the
persistent photoconductivity regime.; Oscillator parameters of PbTe;
Gallium-induced resonant states in Pb 1-x Sn x Te:Ga under pressure;
Electrical properties of n-layers of narrow gap semiconductors formed by
low energy ion beam milling; Pump-probe measurement of lifetime engineering
in far-infrared SiGe quantum wells.; Intersubband Transitions in GaP-AlP
Heterostructures for Infrared Applications; Transport Characteristics of I
1-x Ga x N Films by MOVPE; Influence of indium on the vibrational modes of
dilute narrow band gap GaNAs alloys; Part I: Variable Range Hopping
transport in narrow-gap semiconducting partially filled skutterudites;
Raman scattering study of the lattice dynamics of the narrow-gap
semiconducting alkaline-earth disilicide; Hall effect in the variable range
hopping regime in CuInSe 2; Part III: Carbon Nanotubes as Narrow Gap
Semiconducting Materials; Carbon Nanotubes as Narrow Gap Semiconducting
Materials; Theory of the Aharonov-Bohm effect in carbon nanotubes;
Unconventional Magnetotransport Phenomena in Individual Carbon Nanotubes;
Dynamic Magnetic Alignment of Single-Walled Carbon Nanotubes in Megagauss
Fields; Nano-Space Transport in Crossed Multi Walled Carbon Nano-Tubes;
Magneto-optical study of Aharonov-Bohm effect on second subbands in
single-walled carbon nanotubes; Pressure dependence of Raman modes in DWCNT
filled with 1D nanocrystalline PbI 2 semiconductor; Part VI: IR & THz
Emitters; Quantum Cascade Lasers: Current Technology and Future Goals;
Antimonide Quantum Cascade Lasers for the 3-5 ?m wavelength range; Buried
waveguide structures in THz quantum cascade lasers; Fabry-Perot and
Distributed-Feedback Mid-Infrared "W" Diode Lasers; Mid-infrared emission
from 100 % spin-polarized states in IV-VI vertical-cavity surface-emitting
lasers; Low threshold 2.37?m InGaAsSb/GaSb QW lasers: Towards the ideal
Quantum Well laser?; Comparative study of AlGaAsSb/GalnAsSb multiple
quantum wells lasers in the wavelength range between 2 and 3 ? m;
Optimization of the indium and nitrogen concentration for long-wavelength
emission of In x Ga 1-x As 1-y N y lasers; Effects of strain and
nonparabolicity on optical gain and threshold current in Mid-Infrared In x
Ga 1-x As y Sb 1-y / Al 0.35 Ga 0.65 As 0.03 Sb 0.97 Quantum Well Lasers;
Electroluminescence studies of laser heterostructures with InSb quantum dot
active region; Near infrared intersubband transitions in delta-doped
InAs/AlSb multi-quantum wells; The temperature dependence of
photoluminescence and IR photoconductivity in InGaAs/GaAs quantum dot
heterostructures; Parametric generation of mid IR radiation in
GaAs/InGaAs/InGaP lasers and waveguides; Terahertz radiation from InAs,
InGaAs and InSb excited by femtosecond optical pulses at wavelengths of 800
and 1560 nm; Stimulated emission of optically pumped Cd x Hg 1-x Te films
in the range 3-5 ?m at 77 K; Part V: IR & THz emitters; Physics and
Applications of InAs/(Galn)Sb Short Period Superlattices; Recent results on
SOFRADIR HgCdTe detectors; A superlattice infrared photodetector operating
at room temperature in the 3-5 ? m wavelength domain; Study on an
up-conversion Quantum-Well Infrared Photodetector Integrated with a
Light-Emitting Diode; Study on lifted-off quantum well infrared
photodetector; Narrow spectral band monolithic lead-chalcogenide-on-Si
mid-IR photodetectors; Progress towards a Mid-Infrared Single Photon
Source; Electron transport in InAs field effect and mesoscopic devices; The
Quasi-Rectangular Quantum Well For High Electron Mobility Transistors
(HEMT); Nano wire Magnetic Memory Cell; Measurements of
magnetic-domain-wall velocity detected by local Hall effect; Mesoscopic
spin-dependent ballistic transport in InSb- and InAs-based
heterostructures; SGM measurements on a disordered InGaAs QPC; Part VI:
Nonlinear dynamics and ultrafast phenomena; Bloch Oscillating
Super-Superlattices; Trembling motion of electrons in NGS; Spin dynamics in
dilute nitride semiconductors at room temperature; Electron spin relaxation
induced by nuclei in quantum dots in time resolved photoluminescence
experiments; Critical role of mobility in determination of spin relaxation
in narrow gap semiconductor quantum wells.; Time Resolved Studies of
Magnetic and Non-magnetic Narrow-gap Semiconductors; Carrier population
effects on polaron states in InAs-GaAs self-assembled quantum dots; Part
VII: Magneto-transport & Magneto-optics; Two-dimensional magnetoexcitons in
the presence of spin-orbit interactions; Magneto-spectroscopy of MIR
quantum cascade lasers; Electron-phonon interaction in quantum cascade
structures probed by Landau level spectroscopy; Photocurrents in
InAs/AlGaSb quantum wells; Electronic continuum states and mid-infrared
absorption of InAs/GaAs quantum dots; Spin-Flip Hopping between Quantum
Dots of HgSe:Fe; Spin-spin subband Landau-level coupling in InSb quantum
wells; Cyclotron resonance study of InAs/AlSb quantum well
heterostructures; Magnetospectroscopy of the Double Quantum Well electron
states.; Coherent magnetic breakdown in 2D hole system at p-GaAs/AlGaAs
heterointerface under uniaxial compression; Study of multicarrier transport
in bulk HgCdTe using 15T pulsed magnetic fields; Magneto-Transport
Properties in Al x Ga 1-x As y Sb 1-y /InAs Quantum Wells