With contributions by Junhao Chu / Tomasz Dietl / Jürgen et al. Gutowski
New Data and Updates for II-VI Compounds
Mitwirkender: Chu, Junhao; Dobrowolski, Witold; Gutowski, Jürgen; Sebald, Kathrin; Story, T.; Voss, Tobias
With contributions by Junhao Chu / Tomasz Dietl / Jürgen et al. Gutowski
New Data and Updates for II-VI Compounds
Mitwirkender: Chu, Junhao; Dobrowolski, Witold; Gutowski, Jürgen; Sebald, Kathrin; Story, T.; Voss, Tobias
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The Landolt-Börnstein subvolumes III/44A and III/44B update the existing 8 volumes III/41 about Semiconductors and contain new Data and Updates for I-VII, III-V, III-VI, IV, VI and II-VI Compounds. The text, tables figures and references are provided in self-contained document files, each one dedicated to a substance and property. The first subvolume III/44A contains a "Systematics of Semiconductor Properties", which should help the non-specialist user to understand the meaning of the material parameters. Hyperlinked lists of substances and properties lead directly to the documents and make…mehr
The Landolt-Börnstein subvolumes III/44A and III/44B update the existing 8 volumes III/41 about Semiconductors and contain new Data and Updates for I-VII, III-V, III-VI, IV, VI and II-VI Compounds. The text, tables figures and references are provided in self-contained document files, each one dedicated to a substance and property. The first subvolume III/44A contains a "Systematics of Semiconductor Properties", which should help the non-specialist user to understand the meaning of the material parameters. Hyperlinked lists of substances and properties lead directly to the documents and make the electronic version an easy-to-use source of semiconductor data. In the new updates III/44A and III/44B, links to existing material in III/41 or to related documents for a specific substance are also included.
Produktdetails
- Produktdetails
- Verlag: Springer Berlin
- Artikelnr. des Verlages: 978-3-540-74391-0
- 2009
- Erscheinungstermin: 13. Januar 2009
- Englisch
- Abmessung: 29.7cm x 21cm
- ISBN-13: 9783540743910
- ISBN-10: 354074391X
- Artikelnr.: 27538044
- Verlag: Springer Berlin
- Artikelnr. des Verlages: 978-3-540-74391-0
- 2009
- Erscheinungstermin: 13. Januar 2009
- Englisch
- Abmessung: 29.7cm x 21cm
- ISBN-13: 9783540743910
- ISBN-10: 354074391X
- Artikelnr.: 27538044
Be1?x Mn x Te: hysteresis.- Be x Zn1?x O: lattice constant.- Be x Zn1?x O: energy gaps.- Hg1?x Cd x Te: phonon frequencies.- Hg1?x Cd x Te: reflectance, absorption.- Hg1-x Cd x Te: binding energies (impurities and defects).- Cd1-x Mg x Se: exciton energies.- Cd1-x Mg x Se: conductivity, Hall mobility.- Cd1-x Mg x Se: refractive index, absorption, dielectric constants.- Cd1-x Mg x Te: critical point energies.- Cd1-x Mg x Te: dielectric constants.- Mg x Zn y Cd1?x?y Se: energy gaps.- CdO: transmission, photoemission data.- CdO: muonium data (impurities and defects).- CdO: photoconductivity, resistivity.- CdO: thermoelectric power.- CdO: mobility, Hall mobility.- CdO x Te1?x : composition dependence of energy gap.- Zn x Cd1-x O: band offsets.- Zn1-x Cd x O: lattice constants.- Zn1-x Cd x O: energy gaps.- Zn1-x Cd x O: band offsets.- Zn1-x Cd x O: reflectance, absorption and photoluminescence.- CdS, zincblende configuration: band structure, energies at symmetry points, gap energies.- CdS, zincblende configuration: Luttinger parameters.- CdS: energy gaps.- CdS: exciton energies, exciton binding energies.- CdS: muonium data (impurities and defects).- CdS: donor-acceptor pairs.- CdS: ionization energies (impurities and defects).- CdS: bound excitons.- CdS: conductivity, resistivity.- CdS: absorption coefficient.- CdS: biexciton data.- CdS: nonlinear optical properties.- CdS: mobility.- CdS: defect formation energies.- CdS x Se1-x : band structure, bowing parameter.- CdS x Se1-x : absorption, refractive index.- CdS x Se1-x : exciton energy.- CdS x Se1-x : band offsets.- CdS x Se1-x : excitonic energy, dephasing time.- Zn x Cd1-x S y Se1-y : band structure, bowing parameter.- CdS x Te1-x : energy gaps, bowing parameter.- CdS x Te1-x : absorption, dielectric constant.- CdS x Te1-x : band offsets.- Zn x Cd1-x S: energy gaps.- Zn x Cd1-x S: conductivity, resistivity.- Zn x Cd1-x S: refractive index, dielectric constants.- Zn x Cd1-x S: mobility.- CdSe, zincblende configuration: band structure, energies at symmetry points, gap energies.- CdSe: Luttinger parameters.- CdSe, hexagonal modification: interband transition energies.- CdSe, hexagonal modification: energy gaps.- CdSe: exciton energies, exchange splitting.- CdSe: muonium data (impurities and defects).- CdSe: conductivity, resistivity.- CdSe: mobilities.- CdSe: refractive index.- CdSe: dielectric constants.- CdSe: nonlinear absorption.- CdSe: spin-orbit splitting, crystal-field splitting.- CdSe: g values (impurities and defects).- CdSe: electron and hole traps.- CdSe x Te1-x : energy gaps, bowing parameter, band offsets.- CdSe x Te1-x : resistivity.- CdSe x Te1-x : absorption, refractive index, dielectric constants.- CdSe x Te1-x : band offsets.- Zn x Cd1-x Se: energy gaps, g factor, splitting of exciton transitions.- Zn x Cd1-x Se: ionization energies, g values (impurities and defects).- Zn x Cd1?x Se: refractive index.- CdTe, zincblende configuration: band structure, energies at symmetry points, gap energies.- CdTe: Luttinger parameters.- CdTe: energy gaps, temperature and pressure dependence.- CdTe: energies at symmetry points.- CdTe: critical point energies, temperature dependence.- CdTe: deformation potentials.- CdTe: exciton energies.- CdTe: ionization energies of shallow impurities.- CdTe: donor-acceptor-pairs.- CdTe: ionization energies of deep impurities.- CdTe: impurity complexes.- CdTe: defect formation energies, entropy of point defects, migration energy.- CdTe: bound excitons.- CdTe: conductivity, resistivity.- CdTe: mobility.- CdTe: carrier concentration, self-diffusion.- CdTe: thermoelectric power.- CdTe: refractive index.- CdTe: absorption.- CdTe: density.- CdTe: enthalpy, entropy.- CdTe: hardness.- CdTe: Debye temperature.- CdTe: effective Lande g factors.- CdTe: thermal conductivity.- CdTe: muonium data (impurities and defects).- Cd x Zn1-x Te: energy gaps.- Cd x Zn1-x Te: ionization energies, free-to-bound transitions.- Cd x Zn1-x Te: conductivity, mobilities, diffusion coefficient.- Cd x Zn1-x Te: refractive index, absorption, dielectric constants.- Cd x Zn1-x Te: Gibbs energy, enthalpy.- Cd x Zn1-x Te: exciton energies.- Cd x Zn1-x Te: bound excitons.- Cd x Zn1-x Te: positron annihilation data at vacancy-impurity complexes (impurities and defects).- Cd x Zn1-x Te: electron and hole traps.- Cd x Zn1-x Te: impurity complexes.- Cd x Zn1-x Te: segregation coefficients (impurities and defects).- Zn1-x Co x O: Curie temperature, magnetization, exchange integral.- Zn1-x Cr x Se: Curie temperature.- Zn1-x Cr x Te: Curie temperatures.- HgSe: phonon dispersion curves, phonon density of states.- HgTe: band structure.- HgTe: energy gaps.- HgTe: deformation potentials.- HgTe: phonon dispersion curves, phonon density of states.- HgTe: lattice parameter.- HgTe: elastic coefficients.- Mg x Zn1-x O, hexagonal modification: energy gaps.- Mg x Zn1-x O, hexagonal modification: exciton energies.- Mg x Zn1-x O, hexagonal modification: effective-mass parameters.- Mg x Zn1-x O, hexagonal modification: lattice parameters, phonon wavenumbers.- Mg x Zn1-x O, hexagonal modification: refractive index, dielectric constants.- Mg x Zn1-x O, cubic modification: energy gaps.- Mg x Zn1-x O, cubic modification: phonon wavenumbers.- Mg x Zn1-x O, cubic modification: refractive index, dielectric constants.- Zn1-x Mg x S y Se1-y : energy gaps.- Zn1-x Mg x S y Se1-y : g values, impurity concentration.- Zn1-x Mg x S y Se1-y : refractive index.- Zn1-x Mg x S y Se1-y : electron and hole traps.- Zn1-x Mg x S: energy gap, effective-mass parameters.- Mg y Zn1-y Te1-x Se x : energy gaps.- Mg y Zn1-y Te1-x Se x : refractive index.- Zn1-x Mg x Se: energy gaps, effective-mass parameters.- Zn1-x Mg x Se: g factors, electron and hole trap data (impurities and defects).- Zn1-x Mg x Se: conductivity, mobility.- Zn1-x Mg x Se: refractive index.- Zn1-x Mg x Se: nonlinear absorption.- Zn1-x Mg x Te: energy gap, bowing parameter.- Zn1-x Mg x Te: bound exciton data.- Zn1-x Mg x Te: resistivity.- Zn1-x Mg x Te: refractive index, dielectric constants.- Zn1-x Mg x Te: effective-mass parameters.- Zn1-x Mn x O: exchange constants.- II-VI semimagnetic semiconductors: exchange constants.- Zn1-x Mn x Te: Curie temperature.- ZnS1-x O x : exciton energies.- ZnS1-x O x : entropy, enthalpy.- ZnS1-x O x : energy gaps, bowing parameter.- ZnS1-x O x : lattice constant, phonon frequencies.- ZnS1-x O x : absorption coefficient.- ZnSe1-x O x : energy gaps, bowing parameter.- diluted magnetic oxides: Curie temperature, magnetization.- ZnS x Se1-x : energy gaps, bowing parameter.- ZnS x Se1-x : g values (impurities and defects).- ZnS x Se1-x : dielectric constants.- ZnS x Se1-x : entropy, enthalpy.- ZnS x Se1-x : ionization energies (impurities and defects).- ZnS x Se1-x : effective-mass parameters.- ZnS x Se1-x : band offsets.- ZnS1-x Te x : energy gaps, bowing parameter.- ZnS1-x Te x : impurity transitions.- ZnS1-x Te x : dielectric constants.- ZnS1-x Te x : bound exciton data.- ZnS1?x Te x : band offsets.- ZnS, cubic modification: band structure, energies at symmetry points, gap energies.- ZnS: Luttinger parameters.- ZnS: exciton energy, binding energy, Zeeman splitting.- ZnS: biexciton data.- ZnS: energy gaps.- ZnS: exciton binding energies, absorption strength.- ZnS: ionization energies (impurities and defects).- ZnS, cubic modification: heat conductivity.- ZnS: refractive index, absorption, dielectric constants.- ZnS: entropy and enthalpy.- ZnS, cubic modification: resistivity.- ZnSe1-x Te x : band gaps, bowing parameter.- ZnSe1-x Te x : bound exciton data.- ZnSe1-x Te x : hardness.- ZnSe1-x Te x : exciton energies.- ZnSe1-x Te x : band offsets.- ZnSe: band structure, energies at symmetry points, gap energies.- ZnSe: Luttinger parameters.- ZnSe: energy gaps, temperature and pressure dependence.- ZnSe: effective-mass parameters.- ZnSe: exciton energies, binding energy.- ZnSe: ionization and excitation energies of donors (impurities and defects).- ZnSe: ionization and excitation energies of acceptors (impurities and defects).- ZnSe: donor-acceptor pairs.- ZnSe: deep impurities, muonium data.- ZnSe: electron and hole traps, formation energies, deep impurities.- ZnSe: bound excitons.- ZnSe: heat conductivity.- ZnSe: resistivity.- ZnSe: mobilities.- ZnSe: refractive index, dielectric constants.- ZnSe: nonlinear optical properties.- ZnSe: heat capacity, enthalpy, entropy.- ZnSe: hardness.- ZnSe: shallow donor g values.- ZnSe: shallow acceptor g values.- ZnTe: band structure, energies at symmetry points, gap energies.- ZnTe: Luttinger parameters.- ZnTe: energy gaps, energies at symmetry points.- ZnTe: deformation potentials.- ZnTe: exciton energies, binding energies.- ZnTe: ionization energies of shallow donors.- ZnTe: donor-acceptor-pairs.- ZnTe: ionization energies and impurity transitions of deep donors.- ZnTe: impurity complexes, positron lifetime.- ZnTe: bound exciton data.- ZnTe: resistivity.- ZnTe: mobilities, diffusion constants.- ZnTe: refractive index, dielectric constants.- ZnTe: nonlinear optical properties.- ZnTe: heat capacity, thermodynamic functions.- ZnTe: Gibbs free energy.- ZnTe: hardness.- ZnTe: Debye temperature.- ZnTe: density.- ZnTe: spatial correlation (impurities and defects).- ZnTe: melting point.
Be1?x Mn x Te: hysteresis.- Be x Zn1?x O: lattice constant.- Be x Zn1?x O: energy gaps.- Hg1?x Cd x Te: phonon frequencies.- Hg1?x Cd x Te: reflectance, absorption.- Hg1-x Cd x Te: binding energies (impurities and defects).- Cd1-x Mg x Se: exciton energies.- Cd1-x Mg x Se: conductivity, Hall mobility.- Cd1-x Mg x Se: refractive index, absorption, dielectric constants.- Cd1-x Mg x Te: critical point energies.- Cd1-x Mg x Te: dielectric constants.- Mg x Zn y Cd1?x?y Se: energy gaps.- CdO: transmission, photoemission data.- CdO: muonium data (impurities and defects).- CdO: photoconductivity, resistivity.- CdO: thermoelectric power.- CdO: mobility, Hall mobility.- CdO x Te1?x : composition dependence of energy gap.- Zn x Cd1-x O: band offsets.- Zn1-x Cd x O: lattice constants.- Zn1-x Cd x O: energy gaps.- Zn1-x Cd x O: band offsets.- Zn1-x Cd x O: reflectance, absorption and photoluminescence.- CdS, zincblende configuration: band structure, energies at symmetry points, gap energies.- CdS, zincblende configuration: Luttinger parameters.- CdS: energy gaps.- CdS: exciton energies, exciton binding energies.- CdS: muonium data (impurities and defects).- CdS: donor-acceptor pairs.- CdS: ionization energies (impurities and defects).- CdS: bound excitons.- CdS: conductivity, resistivity.- CdS: absorption coefficient.- CdS: biexciton data.- CdS: nonlinear optical properties.- CdS: mobility.- CdS: defect formation energies.- CdS x Se1-x : band structure, bowing parameter.- CdS x Se1-x : absorption, refractive index.- CdS x Se1-x : exciton energy.- CdS x Se1-x : band offsets.- CdS x Se1-x : excitonic energy, dephasing time.- Zn x Cd1-x S y Se1-y : band structure, bowing parameter.- CdS x Te1-x : energy gaps, bowing parameter.- CdS x Te1-x : absorption, dielectric constant.- CdS x Te1-x : band offsets.- Zn x Cd1-x S: energy gaps.- Zn x Cd1-x S: conductivity, resistivity.- Zn x Cd1-x S: refractive index, dielectric constants.- Zn x Cd1-x S: mobility.- CdSe, zincblende configuration: band structure, energies at symmetry points, gap energies.- CdSe: Luttinger parameters.- CdSe, hexagonal modification: interband transition energies.- CdSe, hexagonal modification: energy gaps.- CdSe: exciton energies, exchange splitting.- CdSe: muonium data (impurities and defects).- CdSe: conductivity, resistivity.- CdSe: mobilities.- CdSe: refractive index.- CdSe: dielectric constants.- CdSe: nonlinear absorption.- CdSe: spin-orbit splitting, crystal-field splitting.- CdSe: g values (impurities and defects).- CdSe: electron and hole traps.- CdSe x Te1-x : energy gaps, bowing parameter, band offsets.- CdSe x Te1-x : resistivity.- CdSe x Te1-x : absorption, refractive index, dielectric constants.- CdSe x Te1-x : band offsets.- Zn x Cd1-x Se: energy gaps, g factor, splitting of exciton transitions.- Zn x Cd1-x Se: ionization energies, g values (impurities and defects).- Zn x Cd1?x Se: refractive index.- CdTe, zincblende configuration: band structure, energies at symmetry points, gap energies.- CdTe: Luttinger parameters.- CdTe: energy gaps, temperature and pressure dependence.- CdTe: energies at symmetry points.- CdTe: critical point energies, temperature dependence.- CdTe: deformation potentials.- CdTe: exciton energies.- CdTe: ionization energies of shallow impurities.- CdTe: donor-acceptor-pairs.- CdTe: ionization energies of deep impurities.- CdTe: impurity complexes.- CdTe: defect formation energies, entropy of point defects, migration energy.- CdTe: bound excitons.- CdTe: conductivity, resistivity.- CdTe: mobility.- CdTe: carrier concentration, self-diffusion.- CdTe: thermoelectric power.- CdTe: refractive index.- CdTe: absorption.- CdTe: density.- CdTe: enthalpy, entropy.- CdTe: hardness.- CdTe: Debye temperature.- CdTe: effective Lande g factors.- CdTe: thermal conductivity.- CdTe: muonium data (impurities and defects).- Cd x Zn1-x Te: energy gaps.- Cd x Zn1-x Te: ionization energies, free-to-bound transitions.- Cd x Zn1-x Te: conductivity, mobilities, diffusion coefficient.- Cd x Zn1-x Te: refractive index, absorption, dielectric constants.- Cd x Zn1-x Te: Gibbs energy, enthalpy.- Cd x Zn1-x Te: exciton energies.- Cd x Zn1-x Te: bound excitons.- Cd x Zn1-x Te: positron annihilation data at vacancy-impurity complexes (impurities and defects).- Cd x Zn1-x Te: electron and hole traps.- Cd x Zn1-x Te: impurity complexes.- Cd x Zn1-x Te: segregation coefficients (impurities and defects).- Zn1-x Co x O: Curie temperature, magnetization, exchange integral.- Zn1-x Cr x Se: Curie temperature.- Zn1-x Cr x Te: Curie temperatures.- HgSe: phonon dispersion curves, phonon density of states.- HgTe: band structure.- HgTe: energy gaps.- HgTe: deformation potentials.- HgTe: phonon dispersion curves, phonon density of states.- HgTe: lattice parameter.- HgTe: elastic coefficients.- Mg x Zn1-x O, hexagonal modification: energy gaps.- Mg x Zn1-x O, hexagonal modification: exciton energies.- Mg x Zn1-x O, hexagonal modification: effective-mass parameters.- Mg x Zn1-x O, hexagonal modification: lattice parameters, phonon wavenumbers.- Mg x Zn1-x O, hexagonal modification: refractive index, dielectric constants.- Mg x Zn1-x O, cubic modification: energy gaps.- Mg x Zn1-x O, cubic modification: phonon wavenumbers.- Mg x Zn1-x O, cubic modification: refractive index, dielectric constants.- Zn1-x Mg x S y Se1-y : energy gaps.- Zn1-x Mg x S y Se1-y : g values, impurity concentration.- Zn1-x Mg x S y Se1-y : refractive index.- Zn1-x Mg x S y Se1-y : electron and hole traps.- Zn1-x Mg x S: energy gap, effective-mass parameters.- Mg y Zn1-y Te1-x Se x : energy gaps.- Mg y Zn1-y Te1-x Se x : refractive index.- Zn1-x Mg x Se: energy gaps, effective-mass parameters.- Zn1-x Mg x Se: g factors, electron and hole trap data (impurities and defects).- Zn1-x Mg x Se: conductivity, mobility.- Zn1-x Mg x Se: refractive index.- Zn1-x Mg x Se: nonlinear absorption.- Zn1-x Mg x Te: energy gap, bowing parameter.- Zn1-x Mg x Te: bound exciton data.- Zn1-x Mg x Te: resistivity.- Zn1-x Mg x Te: refractive index, dielectric constants.- Zn1-x Mg x Te: effective-mass parameters.- Zn1-x Mn x O: exchange constants.- II-VI semimagnetic semiconductors: exchange constants.- Zn1-x Mn x Te: Curie temperature.- ZnS1-x O x : exciton energies.- ZnS1-x O x : entropy, enthalpy.- ZnS1-x O x : energy gaps, bowing parameter.- ZnS1-x O x : lattice constant, phonon frequencies.- ZnS1-x O x : absorption coefficient.- ZnSe1-x O x : energy gaps, bowing parameter.- diluted magnetic oxides: Curie temperature, magnetization.- ZnS x Se1-x : energy gaps, bowing parameter.- ZnS x Se1-x : g values (impurities and defects).- ZnS x Se1-x : dielectric constants.- ZnS x Se1-x : entropy, enthalpy.- ZnS x Se1-x : ionization energies (impurities and defects).- ZnS x Se1-x : effective-mass parameters.- ZnS x Se1-x : band offsets.- ZnS1-x Te x : energy gaps, bowing parameter.- ZnS1-x Te x : impurity transitions.- ZnS1-x Te x : dielectric constants.- ZnS1-x Te x : bound exciton data.- ZnS1?x Te x : band offsets.- ZnS, cubic modification: band structure, energies at symmetry points, gap energies.- ZnS: Luttinger parameters.- ZnS: exciton energy, binding energy, Zeeman splitting.- ZnS: biexciton data.- ZnS: energy gaps.- ZnS: exciton binding energies, absorption strength.- ZnS: ionization energies (impurities and defects).- ZnS, cubic modification: heat conductivity.- ZnS: refractive index, absorption, dielectric constants.- ZnS: entropy and enthalpy.- ZnS, cubic modification: resistivity.- ZnSe1-x Te x : band gaps, bowing parameter.- ZnSe1-x Te x : bound exciton data.- ZnSe1-x Te x : hardness.- ZnSe1-x Te x : exciton energies.- ZnSe1-x Te x : band offsets.- ZnSe: band structure, energies at symmetry points, gap energies.- ZnSe: Luttinger parameters.- ZnSe: energy gaps, temperature and pressure dependence.- ZnSe: effective-mass parameters.- ZnSe: exciton energies, binding energy.- ZnSe: ionization and excitation energies of donors (impurities and defects).- ZnSe: ionization and excitation energies of acceptors (impurities and defects).- ZnSe: donor-acceptor pairs.- ZnSe: deep impurities, muonium data.- ZnSe: electron and hole traps, formation energies, deep impurities.- ZnSe: bound excitons.- ZnSe: heat conductivity.- ZnSe: resistivity.- ZnSe: mobilities.- ZnSe: refractive index, dielectric constants.- ZnSe: nonlinear optical properties.- ZnSe: heat capacity, enthalpy, entropy.- ZnSe: hardness.- ZnSe: shallow donor g values.- ZnSe: shallow acceptor g values.- ZnTe: band structure, energies at symmetry points, gap energies.- ZnTe: Luttinger parameters.- ZnTe: energy gaps, energies at symmetry points.- ZnTe: deformation potentials.- ZnTe: exciton energies, binding energies.- ZnTe: ionization energies of shallow donors.- ZnTe: donor-acceptor-pairs.- ZnTe: ionization energies and impurity transitions of deep donors.- ZnTe: impurity complexes, positron lifetime.- ZnTe: bound exciton data.- ZnTe: resistivity.- ZnTe: mobilities, diffusion constants.- ZnTe: refractive index, dielectric constants.- ZnTe: nonlinear optical properties.- ZnTe: heat capacity, thermodynamic functions.- ZnTe: Gibbs free energy.- ZnTe: hardness.- ZnTe: Debye temperature.- ZnTe: density.- ZnTe: spatial correlation (impurities and defects).- ZnTe: melting point.