1. Introduction M. Rudolph; 2. DC and thermal modeling: III-V FETs and HBTs M. Iwamoto J. Xu and D. E. Root; 3. Extrinsic parameter and parasitic elements in III-V HBT and HEMT modeling S. R. Nedeljkovic W. J. Clausen F. Kharabi J. R. F. McMacken and J. M. Gering; 4. Uncertainties in small-signal equivalent circuit modeling C. Fager K. Andersson and M. Ferndahl; 5. The large-signal model: theoretical foundations practical considerations and recent trends D. E. Root J. Horn J. Xu and M. Iwamoto; 6. Large and packaged transistors J. Engelmann F.-J. Schmückle and M. Rudolph; 7. Characterization and modeling of dispersive effects O. Jardel R. Sommet J.-P. Teyssier and R. Quéré; 8. Optimizing microwave measurements for model construction and validation D. Schreurs M. Myslinski and G. Crupi; 9. Practical statistical simulation for efficient circuit design P. Zampardi Y. Yang J. Hu B. Li M. Fredriksson K. Kwok and H. Shao; 10. Noise modeling M. Berroth.
1. Introduction M. Rudolph; 2. DC and thermal modeling: III-V FETs and HBTs M. Iwamoto J. Xu and D. E. Root; 3. Extrinsic parameter and parasitic elements in III-V HBT and HEMT modeling S. R. Nedeljkovic W. J. Clausen F. Kharabi J. R. F. McMacken and J. M. Gering; 4. Uncertainties in small-signal equivalent circuit modeling C. Fager K. Andersson and M. Ferndahl; 5. The large-signal model: theoretical foundations practical considerations and recent trends D. E. Root J. Horn J. Xu and M. Iwamoto; 6. Large and packaged transistors J. Engelmann F.-J. Schmückle and M. Rudolph; 7. Characterization and modeling of dispersive effects O. Jardel R. Sommet J.-P. Teyssier and R. Quéré; 8. Optimizing microwave measurements for model construction and validation D. Schreurs M. Myslinski and G. Crupi; 9. Practical statistical simulation for efficient circuit design P. Zampardi Y. Yang J. Hu B. Li M. Fredriksson K. Kwok and H. Shao; 10. Noise modeling M. Berroth.
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