Kuo-Dong Huang

Novel Structural Polycrystalline Silicon Thin Film Transistor

Fabrication and Characterization of Polycrystalline Silicon Thin Film Transistor with Buried Insulator

• Broschiertes Buch

Produktbeschreibung

This thesis is mainly surveyed the characteristics of polycrystalline silicon thin film transistor (TFT) putting forward and probing into four kinds of novel buried-oxide structures. With these structures, we can improve the shortcoming of the traditional polycrystalline silicon TFT, like leakage current (On/Off state current), subthreshold swing, floating body effect (kink effect), self-heating effect, and short channel effect etc.. Novel buried-oxide polysilicon thin-film transistors (poly-Si TFTs) are proposed and demonstrated to be superior to their conventional counterparts. Furthermore, these novel structures are simple to fabricate, practical, and completely compatible on CMOS technology. Otherwise, the poly-Si TFT with/without NH3 annealing and body implantation, and their corresponding effects, have also been investigated and discussed in depth.

Produktdetails

• Verlag: VDM Verlag Dr. Müller
• Seitenzahl: 192
• Englisch
• Gewicht: 268g
• ISBN-13: 9783639129878
• ISBN-10: 3639129873
• Artikelnr.: 26052424

Autorenporträt

Dr. Kuo-Dong Huang was born in Taiwan, R.O.C. His study involved
in single electron device, silicon-on-insulator (SOI) and
polycrystalline silicon thin-film transistor (TFT) devices with
novel structures for high-integrated and low-power developments.