November 16

Herausgegeben:Görlich

• Gebundenes Buch

Produktbeschreibung

Keine ausführliche Beschreibung für "November 16" verfügbar.

Produktdetails

• Verlag: De Gruyter
• 1972.
• Seitenzahl: 420
• Erscheinungstermin: 14. Januar 1972
• Deutsch
• Abmessung: 246mm x 175mm x 29mm
• Gewicht: 883g
• ISBN-13: 9783112472699
• ISBN-10: 3112472691
• Artikelnr.: 62911962

Inhaltsangabe

Frontmatter -- Classification Scheme -- Physica status solidi (a) applied research -- Contents -- Urbach Rule -- Original Papers -- Multiple OQG Radiation Spectrum Dependence on Mutual Orientation of Transition Dipole Moments of Working Centres -- Contribution à l'étude, par simulation sur ordinateur, de l'effet de l'irradiation neutronique d'une solution solide ordonnée -- Off-Axis Acoustoelectric Domains Studied by Brillouin Scattering -- Die Abscheidung von Bornitridschichten auf Siliziumsubstraten und ihre Verwendung als Diffusionsquelle -- The Effect of Substitutional Dynamic Strain Ageing on the Mechanical Behaviour of an Iron-1.1 at % Niobium Alloy -- On the Origin of the Maximum in the Electromechanical Activity in Pb(ZrxTi1-x)03 Ceramics near the Morphotropic Phase Boundary -- Channelling of MeV Projectiles in Diatomic Ionic Crystals -- Determination of Structure Potentials and Absorption Potentials of Silicon from Electron Diffraction Intensities -- On the Formation of the Ferromagnetic Phase in MnAs 0.97 P 0.03 -- Ein automatisiertes Meßverfahren zur Bestimmung der magnetischen Nachwirkung in Ferromagnetika -- Magnetic Susceptibility and Structure Modifications of Some Irradiated Re Compounds -- Switching Curves of Stray-Field-Coupled Ferro-Ferromagnetic Multi-Layer Films -- Photoemissive Determination of the Barrier Profile in Al-Al2 O3-Al Tunnel Junctions -- Concentration Dependence of the Zero Phonon Line in Europium-Doped CaF2 -- Beam-Broadening due to Inelastic Scattering of Fast Electrons in Polycrystalline Permalloy Films -- Band-to-Band Auger Recombination in Indirect Gap Semiconductors -- An Investigation of the Structure of Non-Crystalline Films of Nickel, Cobalt, and Cobalt-Phosphorus by Electron Diffraction -- Ion Irradiation Damage of Silicon in the Transmission Electron Microscope -- Etch Pit Dislocation Density and the Critical Resolved Shear Stress of Lead -- Field Emission Studies on Clean Symmetrical Surfaces of Cadmium Sulfide -- Photon Pressure Effects in Semiconductors -- Diffraction Evidence for the Existence of an F.C.C.-> H.C.P. Transformation in Yb -- Interdiffusion and Compound Formation in Thin Films of Pd or Pt on Si Single Crystals -- Relationship between Crack Dislocations and Crystal Lattice Dislocations1 -- Theory of Space-Charge-Limited Currents with Large Drift Velocities -- Preparation of Germanium-Silicon Thermo-Electric Elements by Hot Pressing -- Genesis of ZnS Polytypes and Their Relative Abundance -- Dislocation Loops Induced by Electron Irradiation of Potassium Chloride at Low Temperatures -- Amplification of Flexural Waves in Single Crystal Platelets of CdS -- Dislocation Substructure in the Surface Layer of Fatigued Al and Ni -- Propagation d'ondes de surface en hyperfréquences sur un barreau de p-InSb -- Resistance to the Motion of Dislocations in the Ll0 Superstructure Caused by Short-Range Order -- Short Notes -- Kossel-Möllenstedt and Kikuchi Patterns in Scanning Electron Microscopy -- Vapour Phase Epitaxial Growth of n-Type GaS on p-Type GaS -- Nachweis eines Zweiphasengebietes bei der DO3 -Ordnungseinstellung in einer magnetisch geordneten Fe-Si-Legierung -- Sur la f. e. m. induite dans le cas de l'effet Procopiu -- Layer-Like Electroluminescence of CdS Single Crystals -- Measurements of the Electric Field Distribution on Semiconductor Surfaces Using the Electron Mirror Microscope (E.M.M.) -- Potential Redistribution in NaCl with Graphite Electrodes -- Magnetic Field Dependence of Acoustoelectric Current in InSb -- Exo-Electron Emission of Silicon and Germanium after Bombardment by Protons of Low Energy -- Even Hall Effect in n-Ge at the Orientation of Current along Low Symmetry Axis -- The Dependence of the Longitudinal Magnetoresistance of n-Ge Caused by the Quantum Transfer of Current Carriers between Minima of Energy on the Uniaxial Elastic Deformation -- Transport Properties of p- and n-Cd1-xZnx Sb at at Low Temperatures (0