November 16

Herausgegeben:Görlich

• Gebundenes Buch

Produktbeschreibung

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Produktdetails

• Verlag: De Gruyter
• 1987.
• Seitenzahl: 452
• Erscheinungstermin: 14. Januar 1987
• Deutsch
• Abmessung: 246mm x 175mm x 30mm
• Gewicht: 935g
• ISBN-13: 9783112480830
• ISBN-10: 311248083X
• Artikelnr.: 62912170

Inhaltsangabe

Frontmatter -- Author Index -- Contents -- Original Papers and Short Notes -- Structure -- Experimental Determination of Electron Escape Weight Functions by Using the Methods oi "Calibrated Amorphous Layers" and "Total External Reflection" -- Reanalysis of the Burgers Circuit -- Polymorphism and Electronic Properties of 3-Ethyl-5-[2- (3-Ethyl-2-Benzothiazolinylidene)- Ethylidene] -Rhodanine -- Orientation Dependence of the Effective Depth of X-Ray Penetration -- Interstitial Atom Ordering in Binary Fe-N Solid Solutions Studied by Mössbauer Spectrometry -- On the Influence of Ar+ Ion Bombardment on the SiLVV Auger Line in Silicon Nitride Films -- Formation of Texture in Co/Cr Films for Perpendicular Magnetic Recording -- On the Stability of Metastable Precipitates in an Al-1.87 at% Cu Alloy at Elevated Temperature -- Crystallization of Metallic Glass Pd80Si20 -- Study of Crystal and Electronic Structure of Ti-Cr Alloys during Decomposition of ß-Solid Solution -- Lattice properties -- Ferroelectricity Associated with the Metastable Phase III of AgNO3 -- Raman Scattering in Glow Discharge Si:H:Cl Films -- Mechanisms for Martensitic Transformations in A15 Superconductors -- Defects, atomistic aspects -- Effect of High AC Field and X-Ray Irradiation on the Dielectric Properties of Quenched LiF Single Crystals -- High Temperature Internal Friction Peak in High Purity Single Crystal Aluminium Sheets and Electron Microscopic Observation on the Related Dislocation Configurations -- Internal and Effective Stresses in the Steady-State Creep of Polycrystalline Cadmium at 0.5 Tm -- Positron Annihilation in Polyethylene Samples Studied by the Doppler Broadening of the Annihilation Radiation Lineshape Technique -- Different Etch Pit Shapes Revealed by Molten KOH Etching on the (001) GaAs Surface and Their Dependence on the Burgers Vectors -- Defect Study of ß-TbH(D)1.9+x -- Core Structure of the a<100> <001> Edge Dislocation in a B2 Ordered Alloy -- Creep of CoO Single Crystals -- Evaluation of Critical Resolved Shear Stress for Systems with General Periodic Stress Fields -- The Low-Temperature Interdiffusion in Compositionally Modulated Nb-Ti Films -- Magnetism -- Magnetic and Crystallographic Properties of Gd(Cu1+x Cox)2 -- Magnetic Properties of Metastable ?-Mn-Type Mn1-y Fey Alloys Produced by Vapor Quenching -- Localized electronic states and transitions -- Thermoluminescence of K2Cd2(S04)3 -- Role of the Background Current in Analysing the ITC Spectrum -- Electric Field Effect on Characteristics of Indium Antimonide MOS Structures -- Electric transport -- The Field and Spectrum Dependences of Impurity Photoconductivity with Exclusion in Compensated Semiconductors -- A Simple Detection Method in Photothermal Deflection Measurements on Thin-Film Semiconductors -- Electrical Resistivity and Magnetization Studies of Some Commercial Steels -- Scattering Anisotropy of Conduction Electrons in CuBe Alloys -- Changes of Electrical Conductivity, Magnetic Susceptibility, and IR Spectra in the Ternary System MOn-x WxO3n-1 -- Upper Critical Field Deduced from Critical Current Data -- ?-Irradiation Effect on Electronic Properties in Hydrogenated Amorphous Silicon -- Charge Transport through Layers of Thermally Nitrided SiO2 -- Short Notes -- A Method for Studying Parameter Variations in VPE Technology -- Sur certains effets multifaisceaux en faisceau convergent -- Contributions of Elastic Strain and Electric Field to Acousto-Optic Diffraction in LiNbO3: Ti -- Low Temperature Thermal Expansion of Cubic Ionic Crystals -- Determination of the Sign of a Dissociated Dislocation in Weak Beam -- Synthesis and Characterization of NASICON Based Glass -- Macrodefects of Pyrolytic Boron Nitride Structure -- Role of Grain Boundary Movements on the Creep Rate Sensitivities in Aluminium -- Peculiarities of Minority Carrier Lifetime Variations in p-n-p-n Structures Fabricated upon Neutron-Transmutation Doped Silicon and Irradiated by Fast Electrons -- Anomalous