Andere Kunden interessierten sich auch für
![Physics and Chemistry of Te and HgTe-based Ternary Semiconductor Melts]( "Physics and Chemistry of Te and HgTe-based Ternary Semiconductor Melts")
Physics and Chemistry of Te and HgTe-based Ternary Semiconductor Melts110,99 €![Physics and Chemistry of Te and HgTe-based Ternary Semiconductor Melts]( "Physics and Chemistry of Te and HgTe-based Ternary Semiconductor Melts")
Physics and Chemistry of Te and HgTe-based Ternary Semiconductor Melts110,99 €![Handbook Series on Semiconductor Parameters - Volume 2: Ternary and Quaternary III-V Compounds]( "Handbook Series on Semiconductor Parameters - Volume 2: Ternary and Quaternary III-V Compounds")
Handbook Series on Semiconductor Parameters - Volume 2: Ternary and Quaternary III-V Compounds148,99 €![Superconductivity in Ternary Compounds II]( "Superconductivity in Ternary Compounds II")
Superconductivity in Ternary Compounds II42,99 €![III-V Ternary Semiconducting Compounds-Data Tables]( "III-V Ternary Semiconducting Compounds-Data Tables")
III-V Ternary Semiconducting Compounds-Data Tables42,99 €![Google Smart Contact Lens: Monitoring Diabetes from Tears]( "Google Smart Contact Lens: Monitoring Diabetes from Tears")
Google Smart Contact Lens: Monitoring Diabetes from Tears23,99 €![Intermediate Layer in the Metal-Silicon Carbide Contact]( "Intermediate Layer in the Metal-Silicon Carbide Contact")
Intermediate Layer in the Metal-Silicon Carbide Contact32,99 €
High quality ZnS0.06Se0.94 epilayer which was lattice-matched to GaAs substrate has been prepared. The sulfur composition x was 0.06 has been determined by EPMA. The FWHM of X-ray diffraction was 187.2 arcsec. ITO film formed by thermal evaporated In-Sn alloy first, then annealing in O2 atmosphere. The conductivity and transparency of ITO have been trade-off at acceptable parameter. Because of the highest current in I-V characteristic in the structure of ITO/ZnS0.06Se0.94:N, we optimized the annealing temperature and time at 450C for 60min in O2 atmosphere. Because of the excellent transparency and conductivity in the structure of ITO/Glass, we optimized the annealing temperature and time at 650C for 60min in O2 atmosphere. In this study, ITO/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au- Zn double heterojunction (DH) structure has been prepared after annealing In- Sn/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au- Zn in O2 atmosphere. I-V characteristic of DH junction structure shows a diode electric property.