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Thin films of GaN, Al0.1Ga0.9N, and ZnO were implanted with Cr, Mn, and nickel Ni to produce dilute magnetic semiconductors. Optical and magnetic techniques were used to evaluate crystal structure restoration and coercive field strength as a function of implant species and annealing temperature. Maximum crystal restoration was obtained for Al0.1Ga0.9N after annealing at 675 oC; for Cr implanted p-GaN after annealing at 750 oC; for Mn or Ni implanted p-GaN after annealing at 675 oC; for Cr implanted ZnO after annealing at 700 oC; for Mn implanted ZnO after annealing at 675 oC; and for Ni implanted ZnO after annealing at 650 oC. Maximum coercive field strengths were found for Cr implanted Al0.1Ga0.9N after annealing at 750 oC; for Mn implanted Al0.1Ga0.9N after annealing at 675 oC; for Ni implanted Al0.1Ga0.9N after annealing at 700 oC; for Cr or Mn implanted p-GaN after annealing at 725 oC; for Ni implanted p-GaN after annealing at 675 oC; for Cr or Ni implanted ZnO after annealing at 725 oC; and for Mn implanted ZnO after annealing at 725 oC. Optimum annealing conditions for optical and magnetic properties of the implanted wide band gap semiconductors agree with each other very well.
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