The carrier thermodynamics of low-dimensional systems is an important aspect for optical devices. The impact of low-dimension on the charge carrier confinement has an effect on the emission line and the variation of the emission energy with temperature, which are all important issues in designing optoelectronic devices. In this work, the temperature and excitation power dependence of photoluminescence (PL) on temperature for different types of quantum confinement are studied both theoretically and experimentally.