Andere Kunden interessierten sich auch für
![MAGNETIC PROPERTIES OF JOSEPHSON JUNCTION NETWORKS]( "MAGNETIC PROPERTIES OF JOSEPHSON JUNCTION NETWORKS")
MAGNETIC PROPERTIES OF JOSEPHSON JUNCTION NETWORKS149,99 €![Electronic and Optoelectronic Properties of Semiconductor Structures]( "Electronic and Optoelectronic Properties of Semiconductor Structures")
Electronic and Optoelectronic Properties of Semiconductor Structures114,99 €![Fabrication ZnO:Al/Si Solar Cell Prepared by Thermal Evaporation]( "Fabrication ZnO:Al/Si Solar Cell Prepared by Thermal Evaporation")
Fabrication ZnO:Al/Si Solar Cell Prepared by Thermal Evaporation32,99 €![Investigations at Metal/Si Surfaces and Interfaces]( "Investigations at Metal/Si Surfaces and Interfaces")
Investigations at Metal/Si Surfaces and Interfaces38,99 €![Nanostructured Cr Doped CdO Thin Films For Optoelectronic Devices]( "Nanostructured Cr Doped CdO Thin Films For Optoelectronic Devices")
Nanostructured Cr Doped CdO Thin Films For Optoelectronic Devices29,99 €![Herstellung organischer Solarzellen mit den Verfahren der elektrochemischen und elektrophoretischen Abscheidung]( "Herstellung organischer Solarzellen mit den Verfahren der elektrochemischen und elektrophoretischen Abscheidung")
Herstellung organischer Solarzellen mit den Verfahren der elektrochemischen und elektrophoretischen Abscheidung65,88 €![Preparation and Investigation of Photodetectors based on ZnO Crystals]( "Preparation and Investigation of Photodetectors based on ZnO Crystals")
Preparation and Investigation of Photodetectors based on ZnO Crystals16,99 €
The amorphous Arsenic is one of the major elements which is working as a junction with silicon. Arsenic films with different thicknesses have been deposited by thermal evaporation technique on glass substrates and c-Si wafer at substrate temperature equal to room temperature under vacuum of 10-5 mbar. These films have been annealed at different annealing temperatures. The structural characteristics of the films prepared on glass substrates have been studied by using X-ray diffraction and AFM. These tests show that all the films have amorphous structure for all thicknesses at room temperature. Crystal growth and recrystallization were observed with increasing Ta which could be due to the structure transformation to partial crystalline.