David Redfield, Richard H. Bube

Photo-induced Defects in Semiconductors

• Gebundenes Buch

Produktbeschreibung

A thorough review of the properties of deep-level, localised defects in semiconductors.

Produktdetails

• Verlag: Cambridge University Press
• Seitenzahl: 230
• Erscheinungstermin: 7. Januar 2016
• Englisch
• Abmessung: 235mm x 157mm x 18mm
• Gewicht: 532g
• ISBN-13: 9780521461962
• ISBN-10: 0521461960
• Artikelnr.: 21335602

Inhaltsangabe

1. Introduction: metastable defects
2. III-V compounds: DX2 and EL2 centers
3. Other crystalline materials
4. Hydrogenated amorphous silicon: properties of defects
5. Hydrogenated amorphous silicon: photo-induced defect kinetics and processes
6. Other amorphous semiconductors
7. Photo-induced defect effects in devices
References
Index.