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A thorough review of the properties of deep-level, localized defects in semiconductors.
This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III-V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.
Review quote:
'The authors give an excellent account of all the basic research undertaken in the area of defects in semiconductors particularly during the last 15 years. They assume that the reader has some basic knowledge of semiconductor physics. The text is presented in a very readable style and it contains over 100 figures. The book should be of direct interest to those scientists actively engaged in both fundamental and applied semiconductor physics. It is very readable and is of a high standard throughout.' C. A. Bates, Contemporary Physics
Table of contents:
1. Introduction: metastable defects; 2. III-V compounds: DX2 and EL2 centers; 3. Other crystalline materials; 4. Hydrogenated amorphous silicon: properties of defects; 5. Hydrogenated amorphous silicon: photo-induced defect kinetics and processes; 6. Other amorphous semiconductors; 7. Photo-induced defect effects in devices; References; Index.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III-V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.
Review quote:
'The authors give an excellent account of all the basic research undertaken in the area of defects in semiconductors particularly during the last 15 years. They assume that the reader has some basic knowledge of semiconductor physics. The text is presented in a very readable style and it contains over 100 figures. The book should be of direct interest to those scientists actively engaged in both fundamental and applied semiconductor physics. It is very readable and is of a high standard throughout.' C. A. Bates, Contemporary Physics
Table of contents:
1. Introduction: metastable defects; 2. III-V compounds: DX2 and EL2 centers; 3. Other crystalline materials; 4. Hydrogenated amorphous silicon: properties of defects; 5. Hydrogenated amorphous silicon: photo-induced defect kinetics and processes; 6. Other amorphous semiconductors; 7. Photo-induced defect effects in devices; References; Index.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.