Reinhard Krause-Rehberg, Hartmut S. Leipner

Positron Annihilation in Semiconductors

Defect Studies

• Gebundenes Buch

Produktbeschreibung

This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.

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The subject of this book is the investigation of lattice imperfections in semiconductors by means of positron annihilation. A comprehensive review is given of the different positron techniques, whose application to various kinds of defects, e.g. vacancies, impurity-vacancy complexes and dislocations, is described. The sensitivity range of positron annihilation with respect to the detection of these defects is compared to that of other defect-sensitive methods. The most prominent results obtained with positrons in practically all important semiconductors are reviewed. A special chapter of the book deals with positron annihilation as a promising tool for many technological purposes. The theoretical background necessary to understand the experimental results is explained in detail.

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Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.

Produktdetails

• Springer Series in Solid-State Sciences 127
• Verlag: Springer / Springer Berlin Heidelberg / Springer, Berlin
• Artikelnr. des Verlages: 978-3-540-64371-5
• 1999
• Seitenzahl: 400
• Erscheinungstermin: 21. Januar 1999
• Englisch
• Abmessung: 241mm x 160mm x 26mm
• Gewicht: 676g
• ISBN-13: 9783540643715
• ISBN-10: 3540643710
• Artikelnr.: 09232770

Inhaltsangabe

1 Introduction.- 2 Experimental Techniques.- 3 Basics of Positron Annihilation in Semiconductors.- 4 Defect Characterization in Elemental Semiconductors.- 5 Defect Characterization in III V Compounds.- 6 Defect Characterization in II VI Compounds.- 7 Defect Characterization in Other Compounds.- 8 Applications of Positron Annihilation in Defect Engineering.- 9 Comparison of Positron Annihilation with Other Defect-Sensitive Techniques.- A1 Semiconductor Data.- A2 Trapping Model Equations.- References.