Cam Nguyen

Radio-Frequency Integrated-Circuit Engineering

• Gebundenes Buch

Produktbeschreibung

Die Technologie komplementärer Metalloxid-Halbleiter (Complementary Metal-Oxide Semiconductor, CMOS) kommt bei der Fertigung integrierter Schaltkreise zum Einsatz. In diesem Fachbuch werden Theorie, Analyse, Eigenschaften (Hochfrequenz/Hochgeschwindigkeit) und Anwendungen von Leiterplatten-Übertragungsleitungen, die in integrierten Schaltkreisen und Systemen verwendet werden, ausführlich behandelt. Weitere Themen sind Anwendungen in allen Bereichen der Hochfrequenztechnik, einschließlich drahtlose Kommunikation, Optik und Computer. Das Fachbuch ist durch das Lösungshandbuch ideal für Studenten im höheren Grundstudium, Ingenieure für Hochfrequenz-Mikrowellentechnik, Optikingenieure, Ingenieure für Festkörperbauelemente und für Computeringenieure.

Produktdetails

• Wiley Series in Microwave and Optical Engineering Vol.1
• Verlag: Wiley & Sons
• Artikelnr. des Verlages: 14639820000
• 1. Auflage
• Seitenzahl: 896
• Erscheinungstermin: 23. März 2015
• Englisch
• Abmessung: 286mm x 221mm x 51mm
• Gewicht: 2215g
• ISBN-13: 9780471398202
• ISBN-10: 0471398209
• Artikelnr.: 34438087

Autorenporträt

Cam Nguyen, PhD, IEEE Fellow, is the Texas Instruments Endowed Professor of Electrical and Computer Engineering at Texas A&M University. He was Program Director at the National Science Foundation during 2003-2004, responsible for research programs in RF and wireless technologies. Over the past 35 years, including 12 years at TRW, Martin Marietta, Aeroject ElectroSystems, Hughes Aircraft and ITT Gilfillan, Professor Nguyen has led numerous RF projects for wireless communications, radar and sensing; developed many RF integrated circuits and systems up to 220 GHz; published five books, six book chapters, over 255 papers; and given more than 160 conference presentations.

Inhaltsangabe

PREFACE xvii 1 INTRODUCTION 1 Problems 5 2 FUNDAMENTALS OF ELECTROMAGNETICS
6 2.1 EM Field Parameters 6 2.2 Maxwell's Equations 7 2.3 Auxiliary
Relations 8 2.4 Sinusoidal Time-Varying Steady State 9 2.5 Boundary
Conditions 10 2.6 Wave Equations 12 2.7 Power 13 2.8 Loss and Propagation
Constant in Medium 14 2.9 Skin Depth 16 2.10 Surface Impedance 17 Problems
19 3 LUMPED ELEMENTS 20 3.1 Fundamentals of Lumped Elements 20 3.2 Quality
Factor of Lumped Elements 28 3.3 Modeling of Lumped Elements 30 3.4
Inductors 32 3.5 Lumped-Element Capacitors 60 3.6 Lumped-Element Resistors
72 References 75 Problems 76 4 TRANSMISSION LINES 85 4.1 Essentials of
Transmission Lines 85 4.2 Transmission-Line Equations 86 4.3
Transmission-Line Parameters 93 4.4 Per-Unit-Length Parameters R,L,C, and G
97 4.5 Dielectric and Conductor Losses in Transmission Lines 107 4.6
Dispersion and Distortion in Transmission Lines 111 4.7 Group Velocity 115
4.8 Impedance, Reflection Coefficients, and Standing-Wave Ratios 117 4.9
Synthetic Transmission Lines 126 4.10 Tem and Quasi-Tem Transmission-Line
Parameters 128 4.11 Printed-Circuit Transmission Lines 132 4.12
Transmission Lines in RFICs 144 4.13 Multi-Conductor Transmission Lines 152
References 173 Problems 174 Appendix 4: Transmission-Line Equations
Derived From Maxwell's Equations 182 5 RESONATORS 186 5.1 Fundamentals of
Resonators 186 5.2 Quality Factor 189 5.3 Distributed Resonators 205 5.4
Resonator's Slope Parameters 231 5.5 Transformation of Resonators 231
References 237 Problems 238 6 IMPEDANCE MATCHING 244 6.1 Basic Impedance
Matching 244 6.2 Design of Impedance-Matching Networks 248 6.3 Kuroda
Identities 262 References 266 Problems 266 7 SCATTERING PARAMETERS 271 7.1
Multiport Networks 271 7.2 Impedance Matrix 273 7.3 Admittance Matrix 274
7.4 Impedance and Admittance Matrix in RF Circuit Analysis 274 7.5
Scattering Matrix 279 7.6 Chain Matrix 293 7.7 Scattering Transmission
Matrix 294 7.8 Conversion Between Two-Port Parameters 295 References 298
Problems 298 8 RF PASSIVE COMPONENTS 304 8.1 Characteristics of Multiport
RF Passive Components 304 8.2 Directional Couplers 311 8.3 Hybrids 326 8.4
Power Dividers 339 8.5 Filters 345 References 371 Problems 372 9
FUNDAMENTALS OF CMOS TRANSISTORS FOR RFIC DESIGN 379 9.1 MOSFET Basics 379
9.2 MOSFET Models 386 9.3 Important MOSFET Frquencies 407 9.4 Other
Important MOSFET Parameters 409 9.5 Varactor Diodes 409 References 412
Problems 412 10 STABILITY 418 10.1 Fundamentals of Stability 418 10.2
Determination of Stable and Unstable Regions 421 10.3 Stability
Consideration for N-Port Circuits 427 References 427 Problems 428 11
AMPLIFIERS 430 11.1 Fundamentals of Amplifier Design 430 11.2 Low Noise
Amplifiers 443 11.3 Design Examples 451 11.4 Power Amplifiers 455 11.5
Balanced Amplifiers 470 11.6 Broadband Amplifiers 489 11.7 Current Mirrors
548 References 552 Problems 553 A11.1 Fundamentals of Signal Flow Graph 563
A11.2 Signal Flow Graph of Two-Port Networks 563 A11.3 Derivation of
Network's Parameters Using Signal Flow Graphs 566 References 571 12
OSCILLATORS 572 12.1 Principle of Oscillation 572 12.2 Fundamentals of
Oscillator Design 575 12.3 Phase Noise 587 12.4 Oscillator Circuits 602
References 626 Problems 627 13 MIXERS 633 13.1 Fundamentals of Mixers 633
13.2 Mixer Types 641 13.3 Other Mixers 650 13.4 Mixer Analysis and Design
656 13.5 Sampling Mixer 667 References 689 Problems 690 14 SWITCHES 694
14.1 Fundamentals of Switches 694 14.2 Analysis of Switching MOSFET 697
14.3 SPST Switches 702 14.4 SPDT Switches 712 14.5 Ultra-Wideband Switches
714 14.6 Ultra-High-Isolation Switches 727 14.7 Filter Switches 737
References 739 Problems 739 15 RFIC SIMULATION, LAYOUT, AND TEST 747 15.1
RFIC Simulation 748 15.2 RFIC Layout 754 15.3 RFIC Measurement 758
References 784 Problems 784 16 SYSTEMS 788 16.1 Fundamentals of Systems 788
16.2 System Type 801 References 826 Problems 826 APPENDIX: RFIC DESIGN
EXAMPLE: MIXER 830 A1.1 Circuit Design Specifications and General Design
Information 830 A1.2 Mixer Design 830 A1.3 Mixer Optimization and Layout
835 A1.4 Simulation Results 836 A1.5 Measured Results 838 References 840
INDEX 841