Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Victor E. Borisenko graduated in 1973 from the Belarusian State University of Informatics and Radioelectronics (BSUIR) as an engineer in semiconductor electronics. He received his first doctorate in physics and mathematics in 1980, his second one in 1988. Since 1990, he has held positions as a professor in many universities worldwide, including the University of Salford in England, the University of Wuppertal in Germany and the University of Electro-Communications in Tokyo, Japan. He now holds a chair as professor and vice-rector of BSUIR and acts as supervisor of the Interuniversity Center of Nanoelectronics and Novel Materials. Since 1995, Professor Borisenko organizes the international conference on physics, chemistry and applications of nanostructures `Nanomeeting? His research team focuses on fundamental electronic and optical properties of semiconducting silicides and low dimensional silicon based nanostructures, carrier transport in semiconductor/dielectric multiquantum wel
ls and DNA, design of novel nanoelectronics and nanophotonic devices, quantum computing.
Inhaltsangabe
1. Transient Heating of Semiconductors by Radiation.- 2. Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals.- 3. Crystallization, Impurity Diffusion, and Segregation in Polycrystalline Silicon.- 4. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III-V Semiconductors.- 5. Diffusion Synthesis of Silicides in Thin-Film Metal-Silicon Structures.- 6. Rapid Thermal Oxidation and Nitridation.- 7. Rapid Thermal Chemical Vapor Deposition.- References.
1. Transient Heating of Semiconductors by Radiation.- 2. Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals.- 3. Crystallization, Impurity Diffusion, and Segregation in Polycrystalline Silicon.- 4. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III-V Semiconductors.- 5. Diffusion Synthesis of Silicides in Thin-Film Metal-Silicon Structures.- 6. Rapid Thermal Oxidation and Nitridation.- 7. Rapid Thermal Chemical Vapor Deposition.- References.
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