Andere Kunden interessierten sich auch für
![Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling]( "Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling")
Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling19,90 €![Sige Heterojunction Bipolar Transistors]( "Sige Heterojunction Bipolar Transistors")
Sige Heterojunction Bipolar Transistors176,99 €![Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors]( "Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors")
Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors32,80 €![Model Parameter Extraction for Very Advanced Heterojunction Bipolar Transistors]( "Model Parameter Extraction for Very Advanced Heterojunction Bipolar Transistors")
Model Parameter Extraction for Very Advanced Heterojunction Bipolar Transistors29,99 €![A Box-Integration/WENO solver for the Boltzmann Transport Equation its Application to High-Speed Heterojunction Bipolar Transistors]( "A Box-Integration/WENO solver for the Boltzmann Transport Equation its Application to High-Speed Heterojunction Bipolar Transistors")
A Box-Integration/WENO solver for the Boltzmann Transport Equation its Application to High-Speed Heterojunction Bipolar Transistors19,99 €![Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications]( "Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications")
Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications129,99 €![High-Frequency Bipolar Transistors]( "High-Frequency Bipolar Transistors")
High-Frequency Bipolar Transistors166,99 €
Nowadays InGaP/GaAs heterojunction bipolar transistors (HBTs) are the preferred technology of high-performance microwave monolithic integrated circuits (MMICs) due to their inherently excellent characteristics. With the smaller dimensions for improving functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, reliability issues are the first concern for the commercialization. To identify the origins of the electrothermal stress-induced device performance degradations observed experimentally, 2-D TCAD simulations were carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the post-stress base current instability. The performances of InGaP/GaAs HBT-based MMICs are sensitive to the variation of core device characteristics. However, detection of this critical issue is difficult due to the circuit complexity. Thus, a practical methodology has been developed to predict the stress impacts on the HBT-based MMICs, which provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.