Zhiming M. Wang (ed.)

Self-Assembled Quantum Dots

Herausgegeben:Wang, Zhiming M.

• Gebundenes Buch

Produktbeschreibung

In recent years, the field of self-assembled quantum dots has shown great promise for nanoscale applications in optoelectronics and quantum computing. Worldwide efforts in both theory and experimental investigations have driven the growth, characterization, and applications of quantum dots into an advanced multidisciplinary field. Written by leading experts in the field, Self-Assembled Quantum Dots provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Topics also includes current device applications such as quantum dot lasers and detectors as well as future applications to quantum information processing.

Produktdetails

• Lecture Notes in Nanoscale Science and Technology 1
• Verlag: Springer / Springer New York / Springer, Berlin
• Artikelnr. des Verlages: 12071265, 978-0-387-74190-1
• 2008
• Seitenzahl: 476
• Erscheinungstermin: 6. Dezember 2007
• Englisch
• Abmessung: 241mm x 160mm x 30mm
• Gewicht: 818g
• ISBN-13: 9780387741901
• ISBN-10: 0387741909
• Artikelnr.: 23037285

Inhaltsangabe

The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding.- Self-assembly of InAs Quantum Dot Structures on Cleaved Facets.- InAs/GaAs Quantum Dots with Multimodal Size Distribution.- Carrier Transfer in the Arrays of Coupled Quantum Dots.- Dynamics of Carrier Transfer into In(Ga)As Self-assembled Quantum Dots.- Spin Phenomena in Self-assembled Quantum Dots.- Excitons and Spins in Quantum Dots Coupled to a Continuum of States.- Quantum Coupling in Quantum Dot Molecules.- Studies of Semiconductor Quantum Dots for Quantum Information Processing.- Stress Relaxation Phenomena in Buried Quantum Dots.- Capacitance-Voltage Spectroscopy of InAs Quantum Dots.- In(Ga)As/GaAs Quantum Dots Grown by MOCVD for Opto-electronic Device Applications.- Area-selective and Site-controlled InAs Quantum-dot Growth Techniques for Photonic Crystal-based Ultra-small Integrated Circuit.- Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands.- Growth and Characterization of III-Nitride Quantum Dots and their Application to Emitters.