Davies

Semiconductor Growth, Surfaces and Interfaces

Herausgegeben:Davies, G. J.; Williams, R. H.

• Gebundenes Buch

Produktbeschreibung

Several diverse but related topics concerned with semiconductor growth are brought together here, for the first time in a single text. Those studying semiconductor growth from any perspective will find this book invaluable and it will be essential reading for all in the semiconductor industry, whether in applications or in manufacturing.

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Produktdetails

• Verlag: Springer / Springer Netherlands
• Artikelnr. des Verlages: 978-0-412-57730-7
• 1994.
• Seitenzahl: 176
• Erscheinungstermin: 31. März 1994
• Englisch
• Abmessung: 241mm x 160mm x 15mm
• Gewicht: 426g
• ISBN-13: 9780412577307
• ISBN-10: 0412577305
• Artikelnr.: 23086935

Inhaltsangabe

Surface reconstruction of GaAs (001) during OMCVD growth. Optical in situ
surface control during MOVPE and MBE growth. Lateral quantum size effects
created by growth induced surface and interface corrugations on
non-(100)-oriented substrates. Fabrication of quantum well wires and
vertical quantum wells on submicron gratings by MOVPE. Evolution of surface
morphology during epitaxial growth. Reaction models for the epitaxial
growth of III-V semiconductors by chemical beam epitaxy. The continuing
drama of the semiconductor interface. STM studies of Fermi-level pinning on
the GaAs (001) surface. Probing semi-conductor interfaces by transmission
electron microscopy. Monitoring growth with X-ray diffraction. Electron
states at semiconductor interfaces: the intrinsic and extrinsic charge
neutrality levels. Control of electrical barriers at semiconductor
heterojunctions by interface doping. In situ characterization and control
of compound semiconductor interfaces.

Rezensionen

...very informative and useful... - Ferroelectrics.