Andere Kunden interessierten sich auch für
![Basic Semiconductor Physics]( "Basic Semiconductor Physics")
Basic Semiconductor Physics64,99 €![Solid State Physics]( "Solid State Physics")
Solid State Physics37,99 €![Coherent Semiconductor Optics]( "Coherent Semiconductor Optics")
Coherent Semiconductor Optics37,99 €![Electro-Optical Effects to Visualize Field and Current Distributions in Semiconductors]( "Electro-Optical Effects to Visualize Field and Current Distributions in Semiconductors")
Electro-Optical Effects to Visualize Field and Current Distributions in Semiconductors77,99 €![Point Defects in Semiconductors and Insulators]( "Point Defects in Semiconductors and Insulators")
Point Defects in Semiconductors and Insulators158,99 €![Electro-Optical Effects to Visualize Field and Current Distributions in Semiconductors]( "Electro-Optical Effects to Visualize Field and Current Distributions in Semiconductors")
Electro-Optical Effects to Visualize Field and Current Distributions in Semiconductors74,99 €![Solid-State Physics]( "Solid-State Physics")
Solid-State Physics46,99 €
This book will be useful to solid-state scientists, device engineers, and students involved in semiconductor design and technology. It provides a lucid account of band structure, density of states, charge transport, energy transport, and optical processes, along with a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, and the quantum Hall effect. This 8th edition has been revised and updated, including several new sections.
This book, now in its ninth edition, still has the character of a textbook with the emphasis on "Physics". The volume has increased somewhat because several improvements have been made and some new items have been included. In Sect. 13. 2 the new Quantum Cascade Laser which covers the far in frared spectral range has been added. In Sect. 14. 4 the theory of the quantum Hall effect is now based on ballistic transport which in a more general respect without referring to the then still unknown quantum Hall effect was consid ered already by Rudolf Peierls. In the same chapter, the recent discovery of a low-temperature resistance oscillation in a very pure semiconductor under the influence of combined dc and ac electric fields in addition to a magnetic field is presented. Furthermore, quantum Hall effect observations with an unprece dented high precision are remarkable and may give a new impetus to theory. A new Sect. 15. 5 presents information about coaxial carbon tubes of nanometer size diameter and how they are integrated as the current transporting element in a field effect transistor. In another new addition Sect. 15. 6 with the title Molecular Electronics, the current-voltage rectifying characteristics of an or ganic Langmuir-Blodgett film of nanometer thickness is shown. These efforts serve to demonstrate where the ever decreasing size of electronic circuits may come to its natural limits. The system of units preferred here is the SI system.
This book, now in its ninth edition, still has the character of a textbook with the emphasis on "Physics". The volume has increased somewhat because several improvements have been made and some new items have been included. In Sect. 13. 2 the new Quantum Cascade Laser which covers the far in frared spectral range has been added. In Sect. 14. 4 the theory of the quantum Hall effect is now based on ballistic transport which in a more general respect without referring to the then still unknown quantum Hall effect was consid ered already by Rudolf Peierls. In the same chapter, the recent discovery of a low-temperature resistance oscillation in a very pure semiconductor under the influence of combined dc and ac electric fields in addition to a magnetic field is presented. Furthermore, quantum Hall effect observations with an unprece dented high precision are remarkable and may give a new impetus to theory. A new Sect. 15. 5 presents information about coaxial carbon tubes of nanometer size diameter and how they are integrated as the current transporting element in a field effect transistor. In another new addition Sect. 15. 6 with the title Molecular Electronics, the current-voltage rectifying characteristics of an or ganic Langmuir-Blodgett film of nanometer thickness is shown. These efforts serve to demonstrate where the ever decreasing size of electronic circuits may come to its natural limits. The system of units preferred here is the SI system.
From the reviews of the ninth edition: "This book of K. Seeger is one of the mostly used source book in the field of semiconductor physics. ... it has become the reference book of many teachers, students and researchers, both in fundamental and applied solid state science. ... Altogether ... this book will undoubtedly continue to be very attractive as a reference book for teachers and researchers in the field of semiconductors." (Michel Wautelet, Physicalia Magazine, Vol. 28 (1), 2006)