Die besonderen, neuartigen Herstellungstechniken der russischen Halbleiterforschung - von der Dotierung von Halbleitern durch geladene Partikel über die Oberflächenpassivierung von III/V-Halbleitern bis zur photochemischen Ätzung und vielen anderen Methoden - werden in diesem Buch der westlichen Welt erstmals zugänglich gemacht. (11/97)
Transmutation Doping of Semiconductors by Charged Particles; Polymer Diffusants in Semiconductor Technology; Rare-Earth Elements in III-V Compounds Technology; Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device Technology; Isovalent Impurity Doping of Direct-Gap III-V Semiconductor Layers; Surface Passivation of III-V Compounds by Inorganic Dielectrics and Polyimides; Precision Profiling of Semiconductor Surfaces by Means of Photochemical Etching; Conclusions; References.
The product of decades of Russian research in semiconductor technology, this invaluable book offers Western researchers and engineers a wide range of new techniques, recipes, and characterization methods that provide simpler, cheaper, and more effective solutions to problems in semiconductor processing and fabrication. Many of these approaches appear here for the first time in Western technological literature.
Introduction to Semiconductor Technology (E. Guk & N. Shmidt).
Transmutation Doping of Semiconductors by Charged Particles (V. Kozlovskii & L. Zakharenkov).
Polymer Diffusants in Semiconductor Technology (E. Guk, et al.).
Rare-Earth Elements in the Technology of III-V Compounds (L. Zakharenkov, et al.).
Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device Technology (N. Sobolev).
Isovalent Impurity Doping of Direct-Gap III-V Semiconductor Layers (V. Chaldyshev & S. Novikov).
Surface Passivation of III-V Compounds by Inorganic Dielectrics and Polyimides (A. Gorelenok, et al.).
Precision Profiling of Semiconductor Surfaces by Photochemical Etching (D. Goryachev, et al.).
Index.
Transmutation Doping of Semiconductors by Charged Particles; Polymer Diffusants in Semiconductor Technology; Rare-Earth Elements in III-V Compounds Technology; Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device Technology; Isovalent Impurity Doping of Direct-Gap III-V Semiconductor Layers; Surface Passivation of III-V Compounds by Inorganic Dielectrics and Polyimides; Precision Profiling of Semiconductor Surfaces by Means of Photochemical Etching; Conclusions; References.
The product of decades of Russian research in semiconductor technology, this invaluable book offers Western researchers and engineers a wide range of new techniques, recipes, and characterization methods that provide simpler, cheaper, and more effective solutions to problems in semiconductor processing and fabrication. Many of these approaches appear here for the first time in Western technological literature.
Introduction to Semiconductor Technology (E. Guk & N. Shmidt).
Transmutation Doping of Semiconductors by Charged Particles (V. Kozlovskii & L. Zakharenkov).
Polymer Diffusants in Semiconductor Technology (E. Guk, et al.).
Rare-Earth Elements in the Technology of III-V Compounds (L. Zakharenkov, et al.).
Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device Technology (N. Sobolev).
Isovalent Impurity Doping of Direct-Gap III-V Semiconductor Layers (V. Chaldyshev & S. Novikov).
Surface Passivation of III-V Compounds by Inorganic Dielectrics and Polyimides (A. Gorelenok, et al.).
Precision Profiling of Semiconductor Surfaces by Photochemical Etching (D. Goryachev, et al.).
Index.