Andere Kunden interessierten sich auch für
![Sic Materials and Devices - Volume 2]( "Sic Materials and Devices - Volume 2")
Sic Materials and Devices - Volume 2108,99 €![MODELING AND ELECTROTHERMAL SIMULATION OF SIC POWER DEVICES]( "MODELING AND ELECTROTHERMAL SIMULATION OF SIC POWER DEVICES")
MODELING AND ELECTROTHERMAL SIMULATION OF SIC POWER DEVICES187,99 €![Compound Semiconductor Bulk Materials and Characterizations]( "Compound Semiconductor Bulk Materials and Characterizations")
Compound Semiconductor Bulk Materials and Characterizations220,99 €![Advanced Semiconductor Devices]( "Advanced Semiconductor Devices")
Advanced Semiconductor Devices137,99 €![Radiation Defect Engineering]( "Radiation Defect Engineering")
Radiation Defect Engineering119,99 €![FLEXIBLE ELECTRONICS]( "FLEXIBLE ELECTRONICS")
FLEXIBLE ELECTRONICS167,99 €![Wide Energy Bandgap Electronic Devices]( "Wide Energy Bandgap Electronic Devices")
Wide Energy Bandgap Electronic Devices241,99 €
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SIC devices--power switching Schottky diodes and high temperature MESFETs--are now on the market This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research,