Peter Ashburn

Sige Heterojunction Bipolar Transistors

• Gebundenes Buch

Produktbeschreibung

The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. Germanium is added to silicon to form high-performance heterojunction bipolar transistors (HBTs) which can operate at higher speeds than standard silicon biploar transistors. These transistors form the enabling devices in a wide range of products for wireless and wired communications.

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SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices.

The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications.

This book features:
_ SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications
_ Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors
_ Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology.

Essential reading for practising microelectronics engineers and researchers.
Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.

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Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.

Produktdetails

• Verlag: Wiley & Sons
• 1. Auflage
• Seitenzahl: 272
• Erscheinungstermin: 2. Dezember 2003
• Englisch
• Abmessung: 235mm x 157mm x 20mm
• Gewicht: 545g
• ISBN-13: 9780470848388
• ISBN-10: 0470848383
• Artikelnr.: 12354281

Autorenporträt

Professor Ashburn has worked as an industrial engineer, a consultant and a university professor and has accumulated a wealth of practical knowledge for incorporation in this book.

Inhaltsangabe

Preface.
Physical Constants Properties of Silicon and Silicon-Germanium.
List of Symbols.
1. Introduction.
2. Basic Bipolar Transistor Theory.
3. Heavy Doping Effects.
4. Second-Order Effects.
5. High-Frequency Performance.
6. Polysilicon Emitters.
7. Properties and Growth of  Silicon-Germanium.
8. Silicon-Germanium Heterojunction Bipolar Transistors.
9. Silicon Bipolar Technology.
10. Silicon-Germanium Heterojunction Bipolar Technology.
11. Compact Models of Bipolar Transistors.
12. Optimization of Silicon and Silicon-Germanium Bipolar Technologies.
References.
Index.