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The monograph is devoted to the problems and possibilities of using silicon to create devices and devices of nanoelectronics and photoenergy. Representations of quantum-dimensional effects are given. Possibilities of their manifestation in silicon elements and structures, as well as physical limitations. Main design and technical and operational indicators: the technology of obtaining semiconductor material with elementary cells AII BVI and AIII BV in the silicon lattice, depending on their composition and structure, as a new promising material for photoenergy and Photonics. The authors express their special gratitude to the Academician of the Academy of Sciences of the Republic of Uzbekistan M.K.Bakhadyrkhanov for the timely assistance in the scientific field and practical support in writing this monograph. The most promising technological possibilities for the formation of nanoscale silicon structures are considered.