SABAH THAHAB

Simulation of InGaN Blue Laser Diode

In this book,the design of InGaN LDs structures including multi quantum wells (MQWs) active region device are described and investigated

• Broschiertes Buch

Produktbeschreibung

In this book, the design of InGaN LDs structures including multi quantum wells (MQWs) active region device are described and investigated by integrated system engineering technology computer aided design (ISE TCAD) device simulator. The parameters of the LDs structures are varied and optimized for high performance. This optimization study involves aspects such as thickness of active region, doping, thickness of stopper layer region, thickness of quantum wells and quantum barriers, number of quantum wells and several approaches to improve and achieve high efficiency, low threshold current and high output power of InGaN LDs. The basic LDs structures treated here are Fabry Perot type InGaN double heterostructure (DH), separate confinement heterostructure (SCH) and multi quantum wells (MQWs).High performance LD has been obtained by using multi quantum wells incorporated with the optimized parameters. The lowest threshold current, higher external quantum efficiency and characteristic temperature are obtained when the number of InGaN well layers is two, at our laser emission wavelength of 415 nm, which is related to the problem of inhomogeneous carrier.

Produktdetails

• Verlag: LAP Lambert Academic Publishing
• Seitenzahl: 232
• Erscheinungstermin: 31. Januar 2011
• Englisch
• Abmessung: 220mm x 150mm x 14mm
• Gewicht: 364g
• ISBN-13: 9783844301014
• ISBN-10: 3844301011
• Artikelnr.: 32811098

Autorenporträt

S M. Thahab was born in Iraq in 1973. In March 2009 he received his Ph.D degree from Nano-Optoelectronics Research and Technology Laboratory in School of Physics, Universiti Sains Malaysia/ Penang/ Malaysia.His research focus is simulation and fabrication of GaN-based electronic and optoelectronic devices such as, InGaN blue LED and LD.