Simulation of MOSFETs BJTs and JFETs - Yang, Xuan;Schroder, Dieter K.
32,99 €
inkl. MwSt.
Versandkostenfrei*
Versandfertig in 6-10 Tagen
  • Broschiertes Buch

Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The…mehr

Andere Kunden interessierten sich auch für
Produktbeschreibung
Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in this book addresses these points. These simulation results in this book provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books.
Autorenporträt
Xuan Yang, Master of Science, Solid-state Electronics, Department of Electrical Engineering, Arizona State University. It was his advisor, Dieter K. Schroder, who guided him to to write this book.