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Presented is our measurements of a single electronic
spin in the gate oxide of submicron-size silicon
field effect transistors. Defects near the silicon
and silicon dioxide interface have profound effects
on the transistor conduction properties. For a
submicron transistor, there might be only one
isolated trap state that is within a proper tunneling
distance regarding to both the coordinate and energy.
We have studied the statistics and dynamics of
individual defects extensively by random telegraph
signal (RTS), the stochastic switching of the channel
conductivity due to the trapping of single channel
electrons by the defect. We also have, for the first
time, studied the spin properties of these individual
defects. By investigating the dependence of RTS
statistics on a
plane magnetic field, we have identified spin states
of a single electron on a defect. Using microwave
radiation of frequencies ranging from 16 - 50 GHz, we
have detected magnetic resonance of a single electron
spin. The trap occupancy or channel current changes
at the electron spin resonance condition, with a
g-factor of 2.02+-0.015.
spin in the gate oxide of submicron-size silicon
field effect transistors. Defects near the silicon
and silicon dioxide interface have profound effects
on the transistor conduction properties. For a
submicron transistor, there might be only one
isolated trap state that is within a proper tunneling
distance regarding to both the coordinate and energy.
We have studied the statistics and dynamics of
individual defects extensively by random telegraph
signal (RTS), the stochastic switching of the channel
conductivity due to the trapping of single channel
electrons by the defect. We also have, for the first
time, studied the spin properties of these individual
defects. By investigating the dependence of RTS
statistics on a
plane magnetic field, we have identified spin states
of a single electron on a defect. Using microwave
radiation of frequencies ranging from 16 - 50 GHz, we
have detected magnetic resonance of a single electron
spin. The trap occupancy or channel current changes
at the electron spin resonance condition, with a
g-factor of 2.02+-0.015.