Indranil Chatterjee

Single Event Upset in Dual- and Triple-Well SRAMs

Radiation-induced Charge Collection Mechanisms in sub-90nm Dual- and Triple-well CMOS SRAMs

• Broschiertes Buch

Produktbeschreibung

CMOS technologies can be either dual-well or triple-well. Triple-well technology has several advantages compared to dual-well technology in terms of electrical performance. Differences in the single-event response between these two technology options, however, are not well understood. This work presents a comprehensive analysis of alpha, neutron and heavy ion-induced upsets in 65-nm and 40-nm dual-well and triple-well CMOS SRAMs. Primary factors affecting the charge-collection mechanisms for a wide range of particle energies are investigated, showing that triple-well technology is more vulnerable to low-LET particles, while dual-well technology is more vulnerable to high-LET particles. For the triple-well technology, charge confinement and multiple-transistor charge collection triggers the Single Event Upset Reversal mechanism that reduces sensitivity at high LETs.

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Produktdetails

• Verlag: LAP Lambert Academic Publishing
• Aufl.
• Seitenzahl: 96
• Erscheinungstermin: 9. Juli 2012
• Englisch
• Abmessung: 220mm x 150mm x 7mm
• Gewicht: 161g
• ISBN-13: 9783659123658
• ISBN-10: 365912365X
• Artikelnr.: 36085860

Autorenporträt

Indranil Chatterjee received his B.Tech in Electronics Engineering from West Bengal University of Technology, India and MS in Electrical Engineering from Vanderbilt University, USA where he is presently a doctoral student. His research interests include Semiconductor Reliability, Radiation Tolerance of Semiconductor Devices and Novel Devices.