Spintronic Materials and Technology

Herausgeber: Xu, Yongbing; Thompson, Sarah

• Broschiertes Buch

Produktbeschreibung

The second-generation spintronic devices discussed in this book will not only improve the existing capabilities of electronic transistors, but will enable future computers to run faster and consume less power. Merging the obstacles and recent technological advances in developing spin-controlled devices into one source, this expert-contributed work discusses underlying theory, experimental results, characterization techniques, and device applications. It also addresses the classes of materials systems with potential use in spintronics, such as ferromagnetic metals and alloys, Heusler alloys and half-metallic oxides, and diluted magnetic semiconductors.

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Produktdetails

• Verlag: Taylor & Francis Ltd (Sales)
• Seitenzahl: 423
• Erscheinungstermin: 19. September 2019
• Englisch
• Abmessung: 231mm x 155mm x 36mm
• Gewicht: 794g
• ISBN-13: 9780367390075
• ISBN-10: 0367390078
• Artikelnr.: 57816097

Autorenporträt

Y B Xu, S M Thompson

Inhaltsangabe

Spintronic Materials and Characterizations. Magneto-Optical Studies of
Magnetic Oxide Semiconductors. Synthesis and Characterization of Wide
Band-Gap Semiconductor Spintronic Materials. Magnetic Properties of
(Ga,Mn)As. Soft X-Ray Resonant Magnetic Scattering from Magnetic
Nanostructures. The Effect for Ru Magnetization Switching and CPP-GMR
Enhancement. The Spin Dependent Interfacial Transparency. Spin Torque and
Domain Wall Magneto Resistance. Current-Driven Switching of
Magnetization-Theory and Experiment. Domain Wall Scattering and
Current-Induced Switching in Patterned Ferromagnetic Devices. Domain Wall
Magnetoresistance in Magnetic Nanowires. Introduction to a Theory of
Current-Driven Domain Wall Motion. Spin-Injection and Spin Devices.
Silicon-Based Spin Electronic Devices: Toward a Spin Transistor. Spin-LEDs:
Fundamentals and Applications. Spin Photo-Electronic Devices Based on Fe
and the Heusler Alloy Co2MnGa. Ballistic Spin Tranport across a Schottky
Barrier Induced by Photoexcitation. Ferromagnetic Metal/III-V Semiconductor
Hybrid Spintronic Devices. The Spin-Valve Transistor.