Yongke Sun, Scott E. Thompson, Toshikazu Nishida

Strain Effect in Semiconductors

Theory and Device Applications

• Gebundenes Buch

Produktbeschreibung

Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.

Produktdetails

• Verlag: Springer / Springer US / Springer, Berlin
• Artikelnr. des Verlages: 12532186, 978-1-4419-0551-2
• 2010 edition
• Seitenzahl: 350
• Erscheinungstermin: 4. Dezember 2009
• Englisch
• Abmessung: 242mm x 164mm x 33mm
• Gewicht: 693g
• ISBN-13: 9781441905512
• ISBN-10: 1441905510
• Artikelnr.: 26226681

Inhaltsangabe

Overview: The Age of Strained Devices.- Band Structures of Strained Semiconductors.- Stress, Strain, Piezoresistivity, and Piezoelectricity.- Strain and Semiconductor Crystal Symmetry.- Band Structures of Strained Semiconductors.- Low-Dimensional Semiconductor Structures.- Transport Theory of Strained Semiconductors.- Semiconductor Transport.- Strain in Semiconductor Devices.- Strain in Electron Devices.- Piezoresistive Strain Sensors.- Strain Effects on Optoelectronic Devices.