Vyacheslav Kachkanov

Broschiertes Buch

Structural properties of luminescent nitride semiconductors

This book presents the results of structural and spectroscopic studies of luminescent nitride semiconductors

Beschreibung

This book presents the results of structural studies of InGaN, AlGaN, InAlN, and rare-earth doped (Tm, Er and Eu) GaN by Extended X-ray Absorption Fine Structure; optical characterisation of RE-doped GaN by cathodoluminescence, photoluminescence and photoluminescence excitation spectroscopies. First attempts to identify the lattice location of emitting centres in nitride semiconductors using X-ray Excited Optical Luminescence for EXAFS detection are also presented.

Autor

BSc in Physics with Distinction, Kalmyk State University (1999); MSc in Physics with Distinction, Saint-Petersburg State University (2001); PhD in Physics, University of Strathclyde (2006); Research Associate at the Cavendish Laboratory, University of Cambridge (2006-2008); Research Officer at University of Bath since 2008.

Produktdetails

• Verlag: LAP Lambert Academic Publishing
• Seitenzahl: 176
• Erscheinungstermin: 13. September 2010
• Englisch
• Abmessung: 220mm x 150mm x 11mm
• Gewicht: 280g
• ISBN-13: 9783838323336
• ISBN-10: 3838323335
• Artikelnr.: 27963331