Structural properties of luminescent nitride semiconductors - Kachkanov, Vyacheslav
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This book presents the results of structural studies of InGaN, AlGaN, InAlN, and rare-earth doped (Tm, Er and Eu) GaN by Extended X-ray Absorption Fine Structure; optical characterisation of RE-doped GaN by cathodoluminescence, photoluminescence and photoluminescence excitation spectroscopies. First attempts to identify the lattice location of emitting centres in nitride semiconductors using X-ray Excited Optical Luminescence for EXAFS detection are also presented.

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Produktbeschreibung
This book presents the results of structural studies of InGaN, AlGaN, InAlN, and rare-earth doped (Tm, Er and Eu) GaN by Extended X-ray Absorption Fine Structure; optical characterisation of RE-doped GaN by cathodoluminescence, photoluminescence and photoluminescence excitation spectroscopies. First attempts to identify the lattice location of emitting centres in nitride semiconductors using X-ray Excited Optical Luminescence for EXAFS detection are also presented.
Autorenporträt
BSc in Physics with Distinction, Kalmyk State University (1999); MSc in Physics with Distinction, Saint-Petersburg State University (2001); PhD in Physics, University of Strathclyde (2006); Research Associate at the Cavendish Laboratory, University of Cambridge (2006-2008); Research Officer at University of Bath since 2008.