Studies on Semiconductor Quantum Structure Lasers - Lin, Gray
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Semiconductor quantum well (QW) and quantum dot (QD) lasers for the fiber-optic communication are investigated in this publication. Three topics are covered: (1) theoretical comparison of QW lasers emitting in 1300-nm band, (2) design and demonstration of 980-nm InGaAs QW lasers with narrow vertical beam divergence, (3) long-wavelength InAs QDs and QD lasers.

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Produktbeschreibung
Semiconductor quantum well (QW) and quantum dot (QD) lasers for the fiber-optic communication are investigated in this publication. Three topics are covered: (1) theoretical comparison of QW lasers emitting in 1300-nm band, (2) design and demonstration of 980-nm InGaAs QW lasers with narrow vertical beam divergence, (3) long-wavelength InAs QDs and QD lasers.
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Autorenporträt
Gray Lin received the B.S., M.S. and Ph.D. degrees from the Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan, in 1994, 1995, and 2001, respectively. Since 2007, he joined the National Chiao-Tung University as a Faculty Member.